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Graphene quantum dot layers with energy-down-shift effect on crystalline-silicon solar cells

Cited 46 time in Web of Science Cited 51 time in Scopus

Lee, Kyung D.; Park, Myung J.; Kim, Do-Yeon; Kim, Soo M.; Kang, Byungjun; Kim, Seongtak; Kim, Hyunho; Lee, Hae-Seok; Kang, Yoonmook; Yoon, Sam S.; Hong, Byung H.; Kim, Donghwan

Issue Date
American Chemical Society
ACS Applied Materials and Interfaces, Vol.7 No.34, pp.19043-19049
Graphene quantum dot (GQD) layers were deposited as an energy-down-shift layer on crystalline-silicon solar cell surfaces by kinetic spraying of GQD suspensions. A supersonic air jet was used to accelerate the GQDs onto the surfaces. Here, we report the coating results on a silicon substrate and the GQDs' application as an energy-down-shift layer in crystalline-silicon solar cells, which enhanced the power conversion efficiency (PCE). GQD layers deposited at nozzle scan speeds of 40, 30, 20, and 10 mm/s were evaluated after they were used to fabricate crystalline-silicon solar cells; the results indicate that GQDs play an important role in increasing the optical absorptivity of the cells. The short-circuit current density was enhanced by about 2.94% (0.9 mA/cm(2)) at 30 mm/s. Compared to a reference device without a GQD energy-down-shift layer, the PCE of p-type silicon solar cells was improved by 2.7% (0.4 percentage points).
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  • College of Natural Sciences
  • Department of Chemistry
Research Area Nanofabrication and characterization, Nanomaterials Synthesis, Quantum mechanics and molecular dynamics simulation, 나노재료 합성, 나노제조 및 특성화, 양자역학 및 분자역학 시뮬레이션


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