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Optical Probing of the Electronic Interaction between Graphene and Hexagonal Boron Nitride

Cited 45 time in Web of Science Cited 45 time in Scopus
Authors
Ahn, Gwanghyun; Kim, Hye Ri; Ko, Taeg Yeoung; Choi, Kyoungjun; Watanabe, Kenji; Taniguchi, Takashi; Hong, Byung Hee; Ryu, Sunmin
Issue Date
2013-02
Citation
ACS Nano, Vol.7 No.2, pp.1533-1541
Keywords
grapheneboron nitrideRaman spectroscopy2D bandelectronic coupling
Abstract
Even weak van der Waals (vdW) adhesion between two-dimensional solids may perturb their various materials properties owing to their low dimensionality. Although the electronic structure of graphene has been predicted to be modified by the vdW interaction with other materials, its optical characterization has not been successful. In this report, we demonstrate that Raman spectroscopy can be utilized to detect a few percent decrease in the Fermi velocity (V-F) of graphene caused by the vdW interaction with underlying hexagonal boron nitride (hBN). Our study also establishes Raman spectroscopic analysis which enables separation of the effects by the vdW interaction from those by mechanical strain or extra charge carriers. The analysis reveals that spectral features of graphene on hBN are mainly affected by change in V-F and mechanical strain but not by charge doping, unlike graphene supported on SiO2 substrates. Graphene on hBN was also found to be less susceptible to thermally induced hole doping.
ISSN
1936-0851
URI
https://hdl.handle.net/10371/172128
DOI
https://doi.org/10.1021/nn305306n
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College of Natural Sciences (자연과학대학)Dept. of Chemistry (화학부)Journal Papers (저널논문_화학부)
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