Browse

Layer-Selective Synthesis of MoS2 and WS2 Structures under Ambient Conditions for Customized Electronics

Cited 6 time in Web of Science Cited 5 time in Scopus
Authors
Park, Seoungwoong; Lee, Aram; Choi, Kwang-Hun; Hyeong, Seok-Ki; Bae, Sukang; Hong, Jae-Min; Kim, Tae-Wook; Hong, Byung Hee; Lee, Seoung-Ki
Issue Date
2020-07
Citation
ACS Nano, Vol.14 No.7, pp.8485-8494
Keywords
transition metal dichalcogenideselective synthesisthermolysisheterostructureflexible electronics
Abstract
Transition metal dichalcogenides (TMDs) have attracted significant interest as one of the key materials in future electronics such as logic devices, optoelectrical devices, and wearable electronics. However, a complicated synthesis method and multistep processes for device fabrication pose major hurdles for their practical applications. Here, we introduce a direct and rapid method for layer-selective synthesis of MoS2 and WS2 structures in wafer-scale using a pulsed laser annealing system (lambda = 1.06 mu m, pulse duration similar to 100 ps) in ambient conditions. The precursor layer of each TMD, which has at least 3 orders of magnitude higher absorption coefficient than those of neighboring layers, rigorously absorbed the incoming energy of the laser pulse and rapidly pyrolyzed in a few nanoseconds, enabling the generation of a MoS2 or WS2 layer without damaging the adjacent layers of SiO2 or polymer substrate. Through experimental and theoretical studies, we establish the underlying principles of selective synthesis and optimize the laser annealing conditions, such as laser wavelength, output power, and scribing speed, under ambient condition. As a result, individual homostructures of patterned MoS2 and WS2 layers were directly synthesized on a 4 in. wafer. Moreover, a consecutive synthesis of the second layer on top of the first synthesized layer realized a vertically stacked WS2/MoS2 heterojunction structure, which can be treated as a cornerstone of electronic devices. As a proof of concept, we demonstrated the behavior of a MoS2-based field-effect transistor, a skin-attachable motion sensor, and a MoS2/WS2-based heterojunction diode in this study. The ultrafast and selective synthesis of the TMDs suggests an approach to the large-area/mass production of functional heterostructure-based electronics.
ISSN
1936-0851
URI
https://hdl.handle.net/10371/172131
DOI
https://doi.org/10.1021/acsnano.0c02745
Files in This Item:
There are no files associated with this item.
Appears in Collections:
College of Natural Sciences (자연과학대학)Dept. of Chemistry (화학부)Journal Papers (저널논문_화학부)
  • mendeley

Items in S-Space are protected by copyright, with all rights reserved, unless otherwise indicated.

Browse