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Quasi-Periodic Nanoripples in Graphene Grown by Chemical Vapor Deposition and Its Impact on Charge Transport

Cited 105 time in Web of Science Cited 106 time in Scopus
Authors
Ni, Guang-Xin; Zheng, Yi; Bae, Sukang; Kim, Hye Ri; Pachoud, Alexandre; Kim, Young Soo; Tan, Chang-Ling; Im, Danho; Ahn, Jong-Hyun; Hong, Byung Hee; Oezyilmaz, Barbaros
Issue Date
2012-02
Citation
ACS Nano, Vol.6 No.2, pp.1158-1164
Keywords
CVD graphenequasi-periodic nanoripple arraysanisotropiccharge transportflexural phonon scatteringtransparent electrodessheet resistance
Abstract
The technical breakthrough in synthesizing graphene by chemical vapor deposition methods (CVD) has opened up enormous opportunities for large-scale device applications. To improve the electrical properties of CVD graphene grown on copper (Cu-CVD graphene), recent efforts have focused on increasing the grain size of such polycrystalline graphene films to 100 mu m and larger. While an increase in grain size and, hence, a decrease of grain boundary density is expected to greatly enhance the device performance, here we show that the charge mobility and sheet resistance of Cu-CVD graphene Is already limited within a single grain. We find that the current high-temperature growth and wet transfer methods of CVD graphene result in quasi-periodic nanoripple arrays (NRAs). Electron-flexural phonon scattering in such partially suspended graphene devices Introduces anisotropic charge transport and sets limits to both the highest possible charge mobility and lowest possible sheet resistance values. Our findings provide guidance for further improving the CVD graphene growth and transfer process.
ISSN
1936-0851
URI
https://hdl.handle.net/10371/172136
DOI
https://doi.org/10.1021/nn203775x
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College of Natural Sciences (자연과학대학)Dept. of Chemistry (화학부)Journal Papers (저널논문_화학부)
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