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Single-Gate Bandgap Opening of Bilayer Graphene by Dual Molecular Doping

Cited 154 time in Web of Science Cited 165 time in Scopus
Authors
Park, Jaesung; Jo, Sae Byeok; Yu, Young-Jun; Kim, Youngsoo; Yang, Jae Won; Lee, Wi Hyoung; Kim, Hyun Ho; Hong, Byung Hee; Kim, Philip; Cho, Kilwon; Kim, Kwang S.
Issue Date
2012-01
Citation
Advanced Materials, Vol.24 No.3, pp.407-411
Keywords
bilayer graphenefield-effect transistorsmolecular dopingbandgap openingself-assembled monolayers
Abstract
Dual doping-driven perpendicular electric field with opposite directions remarkably increase the on/off current ratio of bilayer graphene field-effect transistors. This unambiguously proves that it is possible to open a bandgap with two molecular dopants (F4-TCNQ and NH2-functionalized self-assembled monolayers (SAMs)) even in a single-gate device structure.
ISSN
0935-9648
URI
https://hdl.handle.net/10371/172148
DOI
https://doi.org/10.1002/adma.201103411
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College of Natural Sciences (자연과학대학)Dept. of Chemistry (화학부)Journal Papers (저널논문_화학부)
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