Publications
Detailed Information
Single-Gate Bandgap Opening of Bilayer Graphene by Dual Molecular Doping
Cited 178 time in
Web of Science
Cited 193 time in Scopus
- Authors
- Issue Date
- 2012-01
- Citation
- Advanced Materials, Vol.24 No.3, pp.407-411
- Abstract
- Dual doping-driven perpendicular electric field with opposite directions remarkably increase the on/off current ratio of bilayer graphene field-effect transistors. This unambiguously proves that it is possible to open a bandgap with two molecular dopants (F4-TCNQ and NH2-functionalized self-assembled monolayers (SAMs)) even in a single-gate device structure.
- ISSN
- 0935-9648
- Files in This Item:
- There are no files associated with this item.
- Appears in Collections:
Related Researcher
- College of Natural Sciences
- Department of Chemistry
Item View & Download Count
Items in S-Space are protected by copyright, with all rights reserved, unless otherwise indicated.