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Single-Gate Bandgap Opening of Bilayer Graphene by Dual Molecular Doping
Cited 177 time in
Web of Science
Cited 192 time in Scopus
- Authors
- Issue Date
- 2012-01
- Citation
- Advanced Materials, Vol.24 No.3, pp.407-411
- Abstract
- Dual doping-driven perpendicular electric field with opposite directions remarkably increase the on/off current ratio of bilayer graphene field-effect transistors. This unambiguously proves that it is possible to open a bandgap with two molecular dopants (F4-TCNQ and NH2-functionalized self-assembled monolayers (SAMs)) even in a single-gate device structure.
- ISSN
- 0935-9648
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Related Researcher
- College of Natural Sciences
- Department of Chemistry
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