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Control of Graphene Field-Effect Transistors by Interfacial Hydrophobic Self-Assembled Monolayers

Cited 108 time in Web of Science Cited 112 time in Scopus
Authors
Lee, Wi Hyoung; Park, Jaesung; Kim, Youngsoo; Kim, Kwang S.; Hong, Byung Hee; Cho, Kilwon
Issue Date
2011-08
Citation
Advanced Materials, Vol.23 No.30, pp.3460-3464
Abstract
Hydrophobic self-assembled monolayers (SAMs) with alkyl chains of various lengths were inserted between CVD-grown graphene layers and their SiO2 substrates (figure). As the SAM alkyl chain length increased, substrate-induced doping was suppressed by the ordered close-packed structure of SAMs with long alkyl chains. Accordingly, graphene transistors constructed on SAMs with long alkyl chains exhibited higher electron/hole mobilities with lower Dirac point voltages.
ISSN
0935-9648
URI
https://hdl.handle.net/10371/172150
DOI
https://doi.org/10.1002/adma.201101340
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College of Natural Sciences (자연과학대학)Dept. of Chemistry (화학부)Journal Papers (저널논문_화학부)
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