Control of Graphene Field-Effect Transistors by Interfacial Hydrophobic Self-Assembled Monolayers
- Lee, Wi Hyoung; Park, Jaesung; Kim, Youngsoo; Kim, Kwang S.; Hong, Byung Hee; Cho, Kilwon
- Issue Date
- Advanced Materials, Vol.23 No.30, pp.3460-3464
- Hydrophobic self-assembled monolayers (SAMs) with alkyl chains of various lengths were inserted between CVD-grown graphene layers and their SiO2 substrates (figure). As the SAM alkyl chain length increased, substrate-induced doping was suppressed by the ordered close-packed structure of SAMs with long alkyl chains. Accordingly, graphene transistors constructed on SAMs with long alkyl chains exhibited higher electron/hole mobilities with lower Dirac point voltages.
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