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Thermal stability of metal Ohmic contacts in indium gallium zinc oxide transistors using a graphene barrier layer
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Jeong Eun | - |
dc.contributor.author | Sharma, Bhupendra K. | - |
dc.contributor.author | Lee, Seoung-Ki | - |
dc.contributor.author | Jeon, Haseok | - |
dc.contributor.author | Hong, Byung Hee | - |
dc.contributor.author | Lee, Hoo-Jeong | - |
dc.contributor.author | Ahn, Jong-Hyun | - |
dc.date.accessioned | 2021-01-31T08:29:19Z | - |
dc.date.available | 2021-01-31T08:29:19Z | - |
dc.date.created | 2020-12-10 | - |
dc.date.issued | 2013-03 | - |
dc.identifier.citation | Applied Physics Letters, Vol.102 No.11, p. 113112 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.other | 118911 | - |
dc.identifier.uri | https://hdl.handle.net/10371/172165 | - |
dc.description.abstract | The excellent impermeability of graphene was exploited to produce stable ohmic contact at the interface between Al metal and a semiconducting indium gallium zinc oxide (IGZO) layer after high-temperature annealing. Thin film transistors (TFTs) were fabricated with and without a graphene interlayer between the Al metal and the IGZO channel region. Metal contact at the interface prepared without a graphene interlayer showed serious instabilities in the IGZO TFT under thermal annealing; however, the insertion of a graphene interlayer between the IGZO channel and the Al metal offered good stability under repeated high-temperature annealing cycles and maintained ohmic contact. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4796174] | - |
dc.language | 영어 | - |
dc.publisher | American Institute of Physics | - |
dc.title | Thermal stability of metal Ohmic contacts in indium gallium zinc oxide transistors using a graphene barrier layer | - |
dc.type | Article | - |
dc.contributor.AlternativeAuthor | 홍병희 | - |
dc.identifier.doi | 10.1063/1.4796174 | - |
dc.citation.journaltitle | Applied Physics Letters | - |
dc.identifier.wosid | 000316544900087 | - |
dc.identifier.scopusid | 2-s2.0-84875717928 | - |
dc.citation.number | 11 | - |
dc.citation.startpage | 113112 | - |
dc.citation.volume | 102 | - |
dc.identifier.sci | 000316544900087 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Hong, Byung Hee | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | IGZO TFTS | - |
dc.subject.keywordPlus | TRANSPARENT | - |
dc.subject.keywordPlus | ZNO | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | DISPLAYS | - |
dc.subject.keywordPlus | PAPER | - |
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