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Atomic layer etching of graphene for full graphene device fabrication

Cited 70 time in Web of Science Cited 73 time in Scopus
Authors
Lim, Woong Sun; Kim, Yi Yeon; Kim, Hyeongkeun; Jang, Sukjae; Kwon, Namyong; Park, Beyoung Jae; Ahn, Jong-Hyun; Chung, Ilsub; Hong, Byung Hee; Yeom, Geun Young
Issue Date
2012-02
Citation
Carbon, Vol.50 No.2, pp.429-435
Abstract
The possibility of fabricating a full graphene device was investigated by utilizing atomic layer etching (ALET) technology. By using O-2 ALET which functions by oxygen radical adsorption followed by the removal of the oxygen chemisorbed on carbon, the removal of exactly one graphene layer per ALET cycle was detected through the increase of the transmittance by 2.3% after one ALET cycle and by the decrease of the G peak in the Raman spectra. The Raman spectra also showed an increase of the D peak after ALET, indicating the formation of physical damage on the graphene surface layer. This damage was mostly recovered by hydrogen annealing at 1000 degrees C after ALET. Full graphene field effect transistors (source, drain: 3 layer, channel: 1, 2, 3 layer) were fabricated by reducing the channel layers using ALET, followed by annealing, and the electrical characteristics of the devices showed the possibility of fabricating fully functional graphene devices composed of an all graphene source/drain and graphene channel by utilizing ALET. (C) 2011 Elsevier Ltd. All rights reserved.
ISSN
0008-6223
URI
https://hdl.handle.net/10371/172173
DOI
https://doi.org/10.1016/j.carbon.2011.08.058
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College of Natural Sciences (자연과학대학)Dept. of Chemistry (화학부)Journal Papers (저널논문_화학부)
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