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Work-Function Engineering of Graphene Electrodes by Self-Assembled Monolayers for High-Performance Organic Field-Effect Transistors
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Jaesung | - |
dc.contributor.author | Lee, Wi Hyoung | - |
dc.contributor.author | Huh, Sung | - |
dc.contributor.author | Sim, Sung Hyun | - |
dc.contributor.author | Kim, Seung Bin | - |
dc.contributor.author | Cho, Kilwon | - |
dc.contributor.author | Hong, Byung Hee | - |
dc.contributor.author | Kim, Kwang S. | - |
dc.date.accessioned | 2021-01-31T08:31:56Z | - |
dc.date.available | 2021-01-31T08:31:56Z | - |
dc.date.created | 2020-12-11 | - |
dc.date.issued | 2011-04 | - |
dc.identifier.citation | Journal of Physical Chemistry Letters, Vol.2 No.8, pp.841-845 | - |
dc.identifier.issn | 1948-7185 | - |
dc.identifier.other | 119017 | - |
dc.identifier.uri | https://hdl.handle.net/10371/172207 | - |
dc.description.abstract | We have devised a method to optimize the performance of organic field-effect transistors (OFETs) by controlling the work functions of graphene electrodes by functionalizing the surface of SiO(2) substrates with self-assembled monolayers (SAMs). The electron-donating NH(2)-terminated SAMs induce strong n-doping in graphene, whereas the CH(3)-terminated SAMs neutralize the p-doping induced by SiO(2) substrates, resulting in considerable changes in the work functions of graphene electrodes. This approach was successfully utilized to optimize electrical properties of graphene field-effect transistors and organic electronic devices using graphene electrodes. Considering the patternability and robustness of SAMs, this method would find numerous applications in graphene-based organic electronics and optoelectronic devices such as organic light-emitting diodes and organic photovoltaic devices. | - |
dc.language | 영어 | - |
dc.publisher | American Chemical Society | - |
dc.title | Work-Function Engineering of Graphene Electrodes by Self-Assembled Monolayers for High-Performance Organic Field-Effect Transistors | - |
dc.type | Article | - |
dc.contributor.AlternativeAuthor | 홍병희 | - |
dc.identifier.doi | 10.1021/jz200265w | - |
dc.citation.journaltitle | Journal of Physical Chemistry Letters | - |
dc.identifier.wosid | 000289824800001 | - |
dc.identifier.scopusid | 2-s2.0-79955493521 | - |
dc.citation.endpage | 845 | - |
dc.citation.number | 8 | - |
dc.citation.startpage | 841 | - |
dc.citation.volume | 2 | - |
dc.identifier.sci | 000289824800001 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Hong, Byung Hee | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.subject.keywordPlus | LEVEL | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | SPECTROSCOPY | - |
dc.subject.keywordPlus | DEVICES | - |
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