Stretchable Graphene Transistors with Printed Dielectrics and Gate Electrodes
- Lee, Seoung-Ki; Kim, Beom Joon; Jang, Houk; Yoon, Sung Cheol; Lee, Changjin; Hong, Byung Hee; Rogers, John A.; Cho, Jeong Ho; Ahn, Jong-Hyun
- Issue Date
- Nano Letters, Vol.11 No.11, pp.4642-4646
- Graphene transistor; stretchable devices; ion gel gate dielectric; printing process; low-voltage operation
- With the emergence of human interface technology, the development of new applications based on stretchable electronics such as conformal biosensors and rollable displays are required. However, the difficulty in developing semiconducting materials with high stretchability required for such applications has restricted the range of applications of stretchable electronics. Here, we present stretchable, printable, and transparent transistors composed of monolithically patterned graphene films. This material offers excellent mechanical, electrical, and optical properties, capable of use as semiconducting channels as well as the source/drain electrodes. Such monolithic graphene transistors show hole and electron mobilities of 1188 +/- 136 and 422 +/- 52 cm(2)/(Vs), respectively, with stable operation at stretching up to 5% even after 1000 or more cycles.
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