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Stretchable Graphene Transistors with Printed Dielectrics and Gate Electrodes

Cited 282 time in Web of Science Cited 300 time in Scopus
Authors
Lee, Seoung-Ki; Kim, Beom Joon; Jang, Houk; Yoon, Sung Cheol; Lee, Changjin; Hong, Byung Hee; Rogers, John A.; Cho, Jeong Ho; Ahn, Jong-Hyun
Issue Date
2011-11
Citation
Nano Letters, Vol.11 No.11, pp.4642-4646
Keywords
Graphene transistorstretchable devicesion gel gate dielectricprinting processlow-voltage operation
Abstract
With the emergence of human interface technology, the development of new applications based on stretchable electronics such as conformal biosensors and rollable displays are required. However, the difficulty in developing semiconducting materials with high stretchability required for such applications has restricted the range of applications of stretchable electronics. Here, we present stretchable, printable, and transparent transistors composed of monolithically patterned graphene films. This material offers excellent mechanical, electrical, and optical properties, capable of use as semiconducting channels as well as the source/drain electrodes. Such monolithic graphene transistors show hole and electron mobilities of 1188 +/- 136 and 422 +/- 52 cm(2)/(Vs), respectively, with stable operation at stretching up to 5% even after 1000 or more cycles.
ISSN
1530-6984
URI
https://hdl.handle.net/10371/172213
DOI
https://doi.org/10.1021/nl202134z
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College of Natural Sciences (자연과학대학)Dept. of Chemistry (화학부)Journal Papers (저널논문_화학부)
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