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Wafer-Scale Synthesis and Transfer of Graphene Films
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Youngbin | - |
dc.contributor.author | Bae, Sukang | - |
dc.contributor.author | Jang, Houk | - |
dc.contributor.author | Jang, Sukjae | - |
dc.contributor.author | Zhu, Shou-En | - |
dc.contributor.author | Sim, Sung Hyun | - |
dc.contributor.author | Song, Young Il | - |
dc.contributor.author | Hong, Byung Hee | - |
dc.contributor.author | Ahn, Jong-Hyun | - |
dc.date.accessioned | 2021-01-31T08:32:31Z | - |
dc.date.available | 2021-01-31T08:32:31Z | - |
dc.date.created | 2020-12-11 | - |
dc.date.issued | 2010-02 | - |
dc.identifier.citation | Nano Letters, Vol.10 No.2, pp.490-493 | - |
dc.identifier.issn | 1530-6984 | - |
dc.identifier.other | 119023 | - |
dc.identifier.uri | https://hdl.handle.net/10371/172218 | - |
dc.description.abstract | We developed means to produce wafer scale, high-quality graphene films as large as 3 in. wafer size on NI and Cu films under ambient pressure and transfer them onto arbitrary substrates through instantaneous etching of metal layers. we also demonstrated the applications of the large-area graphene films for the batch fabrication of held-effect transistor (FET) arrays and stretchable strain gauges showing extraordinary performances. Transistors showed the hole and electron mobilities of the device of 1100 +/- 70 and 550 +/- 50 cm(2)/(V s) at drain bias of -0.75 V, respectively. The piezo-resistance gauge factor of strain sensor was similar to 6.1. These methods represent a significant. step toward the realization of graphene devices in wafer scale as well as application in optoelectronics, flexible and stretchable electronics. | - |
dc.language | 영어 | - |
dc.publisher | American Chemical Society | - |
dc.title | Wafer-Scale Synthesis and Transfer of Graphene Films | - |
dc.type | Article | - |
dc.contributor.AlternativeAuthor | 홍병희 | - |
dc.identifier.doi | 10.1021/nl903272n | - |
dc.citation.journaltitle | Nano Letters | - |
dc.identifier.wosid | 000274338800022 | - |
dc.identifier.scopusid | 2-s2.0-76749100296 | - |
dc.citation.endpage | 493 | - |
dc.citation.number | 2 | - |
dc.citation.startpage | 490 | - |
dc.citation.volume | 10 | - |
dc.identifier.sci | 000274338800022 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Hong, Byung Hee | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.subject.keywordPlus | CARBON NANOTUBES | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordAuthor | Graphene | - |
dc.subject.keywordAuthor | transfer | - |
dc.subject.keywordAuthor | field effect transistor | - |
dc.subject.keywordAuthor | strain gauge | - |
dc.subject.keywordAuthor | stretchable electronics | - |
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