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A highly conducting graphene film with dual-side molecular n-doping
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Youngsoo | - |
dc.contributor.author | Park, Jaesung | - |
dc.contributor.author | Kang, Junmo | - |
dc.contributor.author | Yoo, Je Min | - |
dc.contributor.author | Choi, Kyoungjun | - |
dc.contributor.author | Kim, Eun Sun | - |
dc.contributor.author | Choi, Jae-Boong | - |
dc.contributor.author | Hwang, Chanyong | - |
dc.contributor.author | Novoselov, K. S. | - |
dc.contributor.author | Hong, Byung Hee | - |
dc.date.accessioned | 2021-01-31T08:32:57Z | - |
dc.date.available | 2021-01-31T08:32:57Z | - |
dc.date.created | 2020-12-10 | - |
dc.date.issued | 2014-08 | - |
dc.identifier.citation | Nanoscale, Vol.6 No.16, pp.9545-9549 | - |
dc.identifier.issn | 2040-3364 | - |
dc.identifier.other | 118904 | - |
dc.identifier.uri | https://hdl.handle.net/10371/172226 | - |
dc.description.abstract | Doping is an efficient way to engineer the conductivity and the work function of graphene, which is, however, limited to wet-chemical doping or metal deposition particularly for n-doping, Here, we report a simple method of modulating the electrical conductivity of graphene by dual-side molecular n-doping with diethylenetriamine (DETA) on the top and amine-functionalized self-assembled monolayers (SAMs) at the bottom. The resulting charge carrier density of graphene is as high as -1.7 x 10(13) cm(-2), and the sheet resistance is as low as, similar to 86 +/- 39 Omega sq(-1), which is believed to be the lowest sheet resistance of monolayer graphene reported so far. This facile dual-side n-doping strategy would be very useful to optimize the performance of various graphene-based electronic devices. | - |
dc.language | 영어 | - |
dc.publisher | Royal Society of Chemistry | - |
dc.title | A highly conducting graphene film with dual-side molecular n-doping | - |
dc.type | Article | - |
dc.contributor.AlternativeAuthor | 홍병희 | - |
dc.identifier.doi | 10.1039/c4nr00479e | - |
dc.citation.journaltitle | Nanoscale | - |
dc.identifier.wosid | 000340217900020 | - |
dc.identifier.scopusid | 2-s2.0-84905160744 | - |
dc.citation.endpage | 9549 | - |
dc.citation.number | 16 | - |
dc.citation.startpage | 9545 | - |
dc.citation.volume | 6 | - |
dc.identifier.sci | 000340217900020 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Hong, Byung Hee | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.subject.keywordPlus | SELF-ASSEMBLED MONOLAYERS | - |
dc.subject.keywordPlus | SINGLE-LAYER GRAPHENE | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | NITROGEN-DOPED GRAPHENE | - |
dc.subject.keywordPlus | TRANSPARENT ELECTRODES | - |
dc.subject.keywordPlus | SUBSTRATE | - |
dc.subject.keywordPlus | SCATTERING | - |
dc.subject.keywordPlus | RAMAN | - |
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