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Large-scale transfer-free growth of thin graphite films at low temperature for solid diffusion barriers
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kang, Su Hyoung | - |
dc.contributor.author | Kang, Sangmin | - |
dc.contributor.author | Park, Seong Chae | - |
dc.contributor.author | Park, Jong Bo | - |
dc.contributor.author | Jung, Youngjin | - |
dc.contributor.author | Hong, Byung Hee | - |
dc.date.accessioned | 2021-01-31T08:33:33Z | - |
dc.date.available | 2021-01-31T08:33:33Z | - |
dc.date.created | 2019-06-26 | - |
dc.date.issued | 2018-08-21 | - |
dc.identifier.citation | Nanoscale, Vol.10 No.31, pp.14819-14823 | - |
dc.identifier.issn | 2040-3364 | - |
dc.identifier.other | 76841 | - |
dc.identifier.uri | https://hdl.handle.net/10371/172234 | - |
dc.description.abstract | Amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) have been under intense investigation as one of the promising candidates for active matrix flat-panel displays. However, solid diffusion of a-IGZO to other layers during TFT device fabrication highly degrades their electrical and optical properties. It is expected that the diffusion-impenetrable properties of graphitic materials can be utilized as diffusion barriers. A conventional transfer method and direct growth on TFTs with high temperature are limited due to wet transfer conditions and low T-g (similar to 540 degrees C) of the glass substrates, respectively. Here we report the large-scale transfer-free growth of thin graphite films at low temperature (similar to 350 degrees C) for solid diffusion barriers in the a-IGZO TFTs using plasma enhanced chemical vapor deposition (PECVD), which can be widely used to protect solid-diffusion for sustainable and scalable future industrial technology. | - |
dc.language | 영어 | - |
dc.publisher | Royal Society of Chemistry | - |
dc.title | Large-scale transfer-free growth of thin graphite films at low temperature for solid diffusion barriers | - |
dc.type | Article | - |
dc.contributor.AlternativeAuthor | 홍병희 | - |
dc.identifier.doi | 10.1039/c8nr03842b | - |
dc.citation.journaltitle | Nanoscale | - |
dc.identifier.wosid | 000445709600003 | - |
dc.identifier.scopusid | 2-s2.0-85051472025 | - |
dc.citation.endpage | 14823 | - |
dc.citation.number | 31 | - |
dc.citation.startpage | 14819 | - |
dc.citation.volume | 10 | - |
dc.identifier.sci | 000445709600003 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Hong, Byung Hee | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.subject.keywordPlus | GA-ZN-O | - |
dc.subject.keywordPlus | GRAPHENE FILMS | - |
dc.subject.keywordPlus | TFTS | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | MOBILITY | - |
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