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Highly uniform growth of monolayer graphene by chemical vapor deposition on Cu-Ag alloy catalysts

Cited 15 time in Web of Science Cited 17 time in Scopus
Authors
Shin, Hae-A-Seul; Ryu, Jaechul; Cho, Sung-Pyo; Lee, Eun-Kyu; Cho, Seungmin; Lee, Changgu; Joo, Young-Chang; Hong, Byung Hee
Issue Date
2014-02
Citation
Physical Chemistry Chemical Physics, Vol.16 No.7, pp.3087-3094
Abstract
One of the major challenges for the practical application of graphene is the large scale synthesis of uniform films with high quality at lower temperature. Here, we demonstrate the use of Ag-plated Cu substrates in the synthesis of high-quality graphene films via chemical vapor deposition (CVD) of methane gas at temperatures as low as 900 degrees C. Various experimental analyses show that the plated Ag diffuses into Cu to form a uniform Cu-Ag alloy that suppresses the formation of multilayer nucleation and decreases the activation energy of precursor formation, leading to a lower synthesis temperature with enhanced monolayer coverage. In addition, we also observed an unusual Ag-assisted abnormal grain growth of Cu into the cube texture with larger grain sizes and reduced grain boundaries, which is believed to provide the homogeneous environment needed for uniform graphene growth.
ISSN
1463-9076
URI
https://hdl.handle.net/10371/172265
DOI
https://doi.org/10.1039/c3cp54748e
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College of Natural Sciences (자연과학대학)Dept. of Chemistry (화학부)Journal Papers (저널논문_화학부)
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