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Stable n-type doping of graphene via high-molecular-weight ethylene amines

Cited 25 time in Web of Science Cited 27 time in Scopus
Authors
Jo, Insu; Kim, Youngsoo; Moon, Joonhee; Park, Subeom; Moon, Jin San; Park, Won Bae; Lee, Jeong Soo; Hong, Byung Hee
Issue Date
2015-11
Citation
Physical Chemistry Chemical Physics, Vol.17 No.44, pp.29492-29495
Abstract
We demonstrate a stable and strong n-type doping method to tune the electrical properties of graphene via vapor phase chemical doping with various high-molecular-weight ethylene amines. The resulting carrier concentration after doping with pentaethylenehexamine (PEHA) is as high as -1.01 x 10(13) cm(-2), which reduces the sheet resistance of graphene by up to similar to 400% compared to pristine graphene. Our study suggests that the branched structure of the dopant molecules is another important factor that determines the actual doping degree of graphene.
ISSN
1463-9076
URI
https://hdl.handle.net/10371/172267
DOI
https://doi.org/10.1039/c5cp03196f
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College of Natural Sciences (자연과학대학)Dept. of Chemistry (화학부)Journal Papers (저널논문_화학부)
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