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Large-area graphene synthesis and its application to interface-engineered field effect transistors

Cited 27 time in Web of Science Cited 30 time in Scopus
Authors
Jo, Sae Byeok; Park, Jaesung; Lee, Wi Hyoung; Cho, Kilwon; Hong, Byung Hee
Issue Date
2012-08
Citation
Solid State Communications, Vol.152 No.15, pp.1350-1358
Keywords
GrapheneChemical vapor depositionTransistorMolecular doping
Abstract
This article reviews recent advances in the large-area synthesis of graphene sheets and the applications of such sheets to graphene-based transistors. Graphene is potentially useful in a wide range of practical applications that could benefit from its exceptional electrical, optical, and mechanical properties. Tremendous effort has been devoted to overcoming several fundamental limitations of graphene, such as a zero band gap and a low direct current conductivity-to-optical conductivity ratio. The intrinsic properties of graphene depend on the synthetic and transfer route, and this dependence has been intensively investigated. Several representative reports describing the application of graphene as a channel and electrode material for use in flexible transparent transistor devices are discussed. A fresh perspective on the optimization of graphene as a 2D framework for crystalline organic semiconductor growth is introduced, and its effects on transistor performance are discussed. This critical review provides insights and a new perspective on the development of high-quality large-area graphene and the optimization of graphene-based transistors. (c) 2012 Elsevier Ltd. All rights reserved.
ISSN
0038-1098
URI
https://hdl.handle.net/10371/172285
DOI
https://doi.org/10.1016/j.ssc.2012.04.056
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College of Natural Sciences (자연과학대학)Dept. of Chemistry (화학부)Journal Papers (저널논문_화학부)
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