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Supra-Binary Polarization in a Ferroelectric Nanowire
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Xu, Wentao | - |
dc.contributor.author | Wang, Lihua | - |
dc.contributor.author | Yang, David ChangMo | - |
dc.contributor.author | Hajibabaei, Amir | - |
dc.contributor.author | Lee, Yeongjun | - |
dc.contributor.author | Park, Cheolmin | - |
dc.contributor.author | Lee, Tae-Woo | - |
dc.contributor.author | Kim, Kwang S. | - |
dc.date.accessioned | 2022-04-20T11:35:21Z | - |
dc.date.available | 2022-04-20T11:35:21Z | - |
dc.date.created | 2021-07-06 | - |
dc.date.created | 2021-07-06 | - |
dc.date.issued | 2021-07 | - |
dc.identifier.citation | Advanced Materials, Vol.33 No.26, p. 2101981 | - |
dc.identifier.issn | 0935-9648 | - |
dc.identifier.other | 137103 | - |
dc.identifier.uri | https://hdl.handle.net/10371/179127 | - |
dc.description.abstract | The prediction and observation of supra-binary polarization in a ferroelectric nanowire (FNW) covered with a semicylindrical gate that provides an anisotropic electric field in the FNW are reported. There are gate-voltage-driven transitions between four polarization states in the FNW's cross-section, dubbed vertical-up, vertical-down, radial-in, and radial-out. They are determined by the interplay between the spatial depolarization energy and the free energy induced by an anisotropic external electric field, in clear distinction from the conventional film-based binary ferroelectricity. When the FNW is mounted on a biased graphene nanoribbon (GNR), these transitions induce exotic current-voltage hysteresis in the FNW-GNR transistor. This discovery suggests new operating mechanisms of ferroelectric devices. In particular, it enables intrinsic quaternary-digit information manipulation in parallel to the bit manipulation employed in conventional data storage. | - |
dc.language | 영어 | - |
dc.publisher | WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim | - |
dc.title | Supra-Binary Polarization in a Ferroelectric Nanowire | - |
dc.type | Article | - |
dc.contributor.AlternativeAuthor | 이태우 | - |
dc.identifier.doi | 10.1002/adma.202101981 | - |
dc.citation.journaltitle | Advanced Materials | - |
dc.identifier.wosid | 000653168400001 | - |
dc.identifier.scopusid | 2-s2.0-85106269291 | - |
dc.citation.number | 26 | - |
dc.citation.startpage | 2101981 | - |
dc.citation.volume | 33 | - |
dc.identifier.sci | 000653168400001 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Lee, Tae-Woo | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.subject.keywordPlus | POLY(VINYLIDENE FLUORIDE) | - |
dc.subject.keywordPlus | GRAPHENE | - |
dc.subject.keywordPlus | BEHAVIOR | - |
dc.subject.keywordPlus | PHASE | - |
dc.subject.keywordPlus | STORAGE | - |
dc.subject.keywordPlus | MEMORY | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordAuthor | ferroelectric nanowires | - |
dc.subject.keywordAuthor | field& | - |
dc.subject.keywordAuthor | #8208 | - |
dc.subject.keywordAuthor | effect transistors | - |
dc.subject.keywordAuthor | graphene nanoribbons | - |
dc.subject.keywordAuthor | Landau& | - |
dc.subject.keywordAuthor | #8211 | - |
dc.subject.keywordAuthor | Ginzburg theory | - |
dc.subject.keywordAuthor | quaternary polarization switching | - |
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