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Supra-Binary Polarization in a Ferroelectric Nanowire

DC Field Value Language
dc.contributor.authorXu, Wentao-
dc.contributor.authorWang, Lihua-
dc.contributor.authorYang, David ChangMo-
dc.contributor.authorHajibabaei, Amir-
dc.contributor.authorLee, Yeongjun-
dc.contributor.authorPark, Cheolmin-
dc.contributor.authorLee, Tae-Woo-
dc.contributor.authorKim, Kwang S.-
dc.date.accessioned2022-04-20T11:35:21Z-
dc.date.available2022-04-20T11:35:21Z-
dc.date.created2021-07-06-
dc.date.created2021-07-06-
dc.date.issued2021-07-
dc.identifier.citationAdvanced Materials, Vol.33 No.26, p. 2101981-
dc.identifier.issn0935-9648-
dc.identifier.other137103-
dc.identifier.urihttps://hdl.handle.net/10371/179127-
dc.description.abstractThe prediction and observation of supra-binary polarization in a ferroelectric nanowire (FNW) covered with a semicylindrical gate that provides an anisotropic electric field in the FNW are reported. There are gate-voltage-driven transitions between four polarization states in the FNW's cross-section, dubbed vertical-up, vertical-down, radial-in, and radial-out. They are determined by the interplay between the spatial depolarization energy and the free energy induced by an anisotropic external electric field, in clear distinction from the conventional film-based binary ferroelectricity. When the FNW is mounted on a biased graphene nanoribbon (GNR), these transitions induce exotic current-voltage hysteresis in the FNW-GNR transistor. This discovery suggests new operating mechanisms of ferroelectric devices. In particular, it enables intrinsic quaternary-digit information manipulation in parallel to the bit manipulation employed in conventional data storage.-
dc.language영어-
dc.publisherWILEY-VCH Verlag GmbH & Co. KGaA, Weinheim-
dc.titleSupra-Binary Polarization in a Ferroelectric Nanowire-
dc.typeArticle-
dc.contributor.AlternativeAuthor이태우-
dc.identifier.doi10.1002/adma.202101981-
dc.citation.journaltitleAdvanced Materials-
dc.identifier.wosid000653168400001-
dc.identifier.scopusid2-s2.0-85106269291-
dc.citation.number26-
dc.citation.startpage2101981-
dc.citation.volume33-
dc.identifier.sci000653168400001-
dc.description.isOpenAccessN-
dc.contributor.affiliatedAuthorLee, Tae-Woo-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.subject.keywordPlusPOLY(VINYLIDENE FLUORIDE)-
dc.subject.keywordPlusGRAPHENE-
dc.subject.keywordPlusBEHAVIOR-
dc.subject.keywordPlusPHASE-
dc.subject.keywordPlusSTORAGE-
dc.subject.keywordPlusMEMORY-
dc.subject.keywordPlusFILMS-
dc.subject.keywordAuthorferroelectric nanowires-
dc.subject.keywordAuthorfield&-
dc.subject.keywordAuthor#8208-
dc.subject.keywordAuthoreffect transistors-
dc.subject.keywordAuthorgraphene nanoribbons-
dc.subject.keywordAuthorLandau&-
dc.subject.keywordAuthor#8211-
dc.subject.keywordAuthorGinzburg theory-
dc.subject.keywordAuthorquaternary polarization switching-
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