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Atomic layer deposition of SnSex thin films using Sn(N(CH3)(2))(4) and Se(Si(CH3)(3))(2) with NH3 co-injection

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Authors

Jeon, Jeong Woo; Yoo, Chanyoung; Kim, Woohyun; Choi, Wonho; Park, Byongwoo; Lee, Yoon Kyeung; Hwang, Cheol Seong

Issue Date
2022-01
Publisher
ROYAL SOC CHEMISTRY
Citation
DALTON TRANSACTIONS, Vol.51 No.2, pp.594-601
Abstract
This study introduces the atomic layer deposition (ALD) of tin selenide thin films using Sn(N(CH3)(2))(4) and Se(Si(CH3)(3))(2) with NH3 co-injection. The co-injection of NH3 with Se(Si(CH3)(3))(2) is essential for film growth to convert the precursor into a more reactive form. The most critical feature of this specific ALD process is that the chemical composition (Sn/Se ratio) could be varied by changing the growth temperature, even for the given precursor injection conditions. The composition and morphology of the deposited films varied depending on the process temperature. Below 150 degrees C, a uniform SnSe2 thin film was deposited in an amorphous phase, maintaining the oxidation states of its precursors. Above 170 degrees C, the composition of the film changed to 1 : 1 stoichiometry due to the crystallization of SnSe and desorption of Se. A two-step growth sequence involving a low-temperature seed layer was devised for the high-temperature ALD of SnSe to improve surface roughness.
ISSN
1477-9226
URI
https://hdl.handle.net/10371/179457
DOI
https://doi.org/10.1039/d1dt03487a
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Materials Science and Engineering (재료공학부)Journal Papers (저널논문_재료공학부)
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