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Interplay between oxygen defects and dopants: Effect on structure and performance of HfO2-based ferroelectrics

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Issue Date
2021-05
Publisher
Royal Society of Chemistry
Citation
Inorganic Chemistry Frontiers, Vol.8 No.10, pp.2650-2672
Abstract
Ten years after the first report on ferroelectricity in HfO2, researchers are still occupied unraveling the different causes behind this phenomenon. Among them, oxygen related defects seem to play a major role, affecting both crystalline phase formation and performance of HfO2-based devices. This review surveys the available literature and provides a broad picture on the topic, starting with an overview of existing oxygen-related defects, assessing the extensive calculations and experimental reports on phase stabilization in both undoped and doped HfO2 and concluding with a discussion of device reliability involving oxygen vacancies, first in more classical HfO2 applications such as MOSFET high-k metal gate and resistive switching devices and later in the three major groups of ferroelectric non-volatile memory devices. © the Partner Organisations.
ISSN
2052-1553
URI
https://hdl.handle.net/10371/183858
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Materials Science and Engineering (재료공학부)Journal Papers (저널논문_재료공학부)
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