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Interplay between oxygen defects and dopants: Effect on structure and performance of HfO2-based ferroelectrics
Cited 60 time in
Web of Science
Cited 61 time in Scopus
- Authors
- Issue Date
- 2021-05
- Publisher
- Royal Society of Chemistry
- Citation
- Inorganic Chemistry Frontiers, Vol.8 No.10, pp.2650-2672
- Abstract
- Ten years after the first report on ferroelectricity in HfO2, researchers are still occupied unraveling the different causes behind this phenomenon. Among them, oxygen related defects seem to play a major role, affecting both crystalline phase formation and performance of HfO2-based devices. This review surveys the available literature and provides a broad picture on the topic, starting with an overview of existing oxygen-related defects, assessing the extensive calculations and experimental reports on phase stabilization in both undoped and doped HfO2 and concluding with a discussion of device reliability involving oxygen vacancies, first in more classical HfO2 applications such as MOSFET high-k metal gate and resistive switching devices and later in the three major groups of ferroelectric non-volatile memory devices. © the Partner Organisations.
- ISSN
- 2052-1553
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