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Next generation ferroelectric materials for semiconductor process integration and their applications

DC Field Value Language
dc.contributor.authorMikolajick, T.-
dc.contributor.authorSlesazeck, S.-
dc.contributor.authorMulaosmanovic, H.-
dc.contributor.authorPark, M.H.-
dc.contributor.authorFichtner, S.-
dc.contributor.authorLomenzo, P.D.-
dc.contributor.authorHoffmann, M.-
dc.contributor.authorSchroeder, U.-
dc.date.accessioned2022-06-24T00:28:44Z-
dc.date.available2022-06-24T00:28:44Z-
dc.date.created2022-05-24-
dc.date.issued2021-03-
dc.identifier.citationJournal of Applied Physics, Vol.129 No.10-
dc.identifier.issn0021-8979-
dc.identifier.urihttps://hdl.handle.net/10371/183863-
dc.description.abstractFerroelectrics are a class of materials that possess a variety of interactions between electrical, mechanical, and thermal properties that have enabled a wealth of functionalities. To realize integrated systems, the integration of these functionalities into semiconductor processes is necessary. To this end, the complexity of well-known ferroelectric materials, e.g., the perovskite class, causes severe issues that limit its applications in integrated systems. The discovery of ferroelectricity in hafnium oxide-based materials brought a renewed interest into this field during the last decade. Very recently, ferroelectricity was also verified in aluminum scandium nitride extending the potential of seeing a wealth of ferroelectric functions in integrated electronics in the future. This paper discusses the prospects of both material systems in various applications. © 2021 Author(s).-
dc.language영어-
dc.publisherAmerican Institute of Physics-
dc.titleNext generation ferroelectric materials for semiconductor process integration and their applications-
dc.typeArticle-
dc.identifier.doi10.1063/5.0037617-
dc.citation.journaltitleJournal of Applied Physics-
dc.identifier.wosid000628795200001-
dc.identifier.scopusid2-s2.0-85102461997-
dc.citation.number10-
dc.citation.volume129-
dc.description.isOpenAccessN-
dc.contributor.affiliatedAuthorPark, M.H.-
dc.type.docTypeArticle-
dc.description.journalClass1-
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