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Next generation ferroelectric materials for semiconductor process integration and their applications
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Mikolajick, T. | - |
dc.contributor.author | Slesazeck, S. | - |
dc.contributor.author | Mulaosmanovic, H. | - |
dc.contributor.author | Park, M.H. | - |
dc.contributor.author | Fichtner, S. | - |
dc.contributor.author | Lomenzo, P.D. | - |
dc.contributor.author | Hoffmann, M. | - |
dc.contributor.author | Schroeder, U. | - |
dc.date.accessioned | 2022-06-24T00:28:44Z | - |
dc.date.available | 2022-06-24T00:28:44Z | - |
dc.date.created | 2022-05-24 | - |
dc.date.issued | 2021-03 | - |
dc.identifier.citation | Journal of Applied Physics, Vol.129 No.10 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | https://hdl.handle.net/10371/183863 | - |
dc.description.abstract | Ferroelectrics are a class of materials that possess a variety of interactions between electrical, mechanical, and thermal properties that have enabled a wealth of functionalities. To realize integrated systems, the integration of these functionalities into semiconductor processes is necessary. To this end, the complexity of well-known ferroelectric materials, e.g., the perovskite class, causes severe issues that limit its applications in integrated systems. The discovery of ferroelectricity in hafnium oxide-based materials brought a renewed interest into this field during the last decade. Very recently, ferroelectricity was also verified in aluminum scandium nitride extending the potential of seeing a wealth of ferroelectric functions in integrated electronics in the future. This paper discusses the prospects of both material systems in various applications. © 2021 Author(s). | - |
dc.language | 영어 | - |
dc.publisher | American Institute of Physics | - |
dc.title | Next generation ferroelectric materials for semiconductor process integration and their applications | - |
dc.type | Article | - |
dc.identifier.doi | 10.1063/5.0037617 | - |
dc.citation.journaltitle | Journal of Applied Physics | - |
dc.identifier.wosid | 000628795200001 | - |
dc.identifier.scopusid | 2-s2.0-85102461997 | - |
dc.citation.number | 10 | - |
dc.citation.volume | 129 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Park, M.H. | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
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