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Fluorinated Graphene Contacts and Passivation Layer for MoS2 Field Effect Transistors

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Issue Date
2022-01
Publisher
Wiley-VCH Verlag
Citation
Advanced Electronic Materials, p. 2101370
Abstract
© 2022 The Authors. Advanced Electronic Materials published by Wiley-VCH GmbHRealizing a future of 2D semiconductor-based devices requires new approaches to channel passivation and nondestructive contact engineering. Here, a facile one-step technique is shown that simultaneously utilizes monolayer fluorinated graphene (FG) as the passivation layer and contact buffer layer to 2D semiconductor transistors. Monolayer graphene is transferred onto the MoS2, followed by fluorination by XeF2 gas exposure. Metal electrodes for source and drain are fabricated on top of FG-covered MoS2 regions. The MoS2 transistor is perfectly passivated by insulating FG layer and, in the contacts, FG layer also acts as an efficient charge injection layer, leading to the formation of Ohmic contacts and high carrier mobility of up to 64 cm2 V−1 s−1 at room temperature. This work shows a novel strategy for simultaneous fabrication of passivation layer and low-resistance contacts by using ultrathin functionalized graphene, which has applications for high performance 2D semiconductor integrated electronics.
ISSN
2199-160X
URI
https://hdl.handle.net/10371/184018
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Materials Science and Engineering (재료공학부)Journal Papers (저널논문_재료공학부)
College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Materials Science and Engineering (재료공학부)Journal Papers (저널논문_재료공학부)
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