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Resist-Free Lithography for Monolayer Transition Metal Dichalcogenides
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Poddar, Preeti K. | - |
dc.contributor.author | Zhong, Yu | - |
dc.contributor.author | Mannix, Andrew J. | - |
dc.contributor.author | Mujid, Fauzia | - |
dc.contributor.author | Yu, Jaehyung | - |
dc.contributor.author | Liang, Ce | - |
dc.contributor.author | Kang, Jong-Hoon | - |
dc.contributor.author | Lee, Myungjae | - |
dc.contributor.author | Xie, Saien | - |
dc.contributor.author | Park, Jiwoong | - |
dc.date.accessioned | 2022-06-24T08:35:13Z | - |
dc.date.available | 2022-06-24T08:35:13Z | - |
dc.date.created | 2022-05-23 | - |
dc.date.issued | 2022-01 | - |
dc.identifier.citation | Nano Letters, Vol.22 No.2, pp.726-732 | - |
dc.identifier.issn | 1530-6984 | - |
dc.identifier.uri | https://hdl.handle.net/10371/184133 | - |
dc.description.abstract | Photolithography and electron-beam lithography are the most common methods for making nanoscale devices from semiconductors. While these methods are robust for bulk materials, they disturb the electrical properties of two-dimensional (2D) materials, which are highly sensitive to chemicals used during lithography processes. Here, we report a resist-free lithography method, based on direct laser patterning and resist-free electrode transfer, which avoids unintentional modification to the 2D materials throughout the process. We successfully fabricate large arrays of field-effect transistors using MoS2 and WSe2 monolayers, the performance of which reflects the properties of the pristine materials. Furthermore, using these pristine devices as a reference, we reveal that among the various stages of a conventional lithography process, exposure to a solvent like acetone changes the electrical conductivity of MoS2 the most. This new approach will enable a rational design of reproducible processes for making large-scale integrated circuits based on 2D materials and other surface-sensitive materials. | - |
dc.language | 영어 | - |
dc.publisher | American Chemical Society | - |
dc.title | Resist-Free Lithography for Monolayer Transition Metal Dichalcogenides | - |
dc.type | Article | - |
dc.identifier.doi | 10.1021/acs.nanolett.1c04081 | - |
dc.citation.journaltitle | Nano Letters | - |
dc.identifier.wosid | 000745244800001 | - |
dc.identifier.scopusid | 2-s2.0-85123353525 | - |
dc.citation.endpage | 732 | - |
dc.citation.number | 2 | - |
dc.citation.startpage | 726 | - |
dc.citation.volume | 22 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Lee, Myungjae | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
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