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Critical evaluation and thermodynamic optimization of the Si-N, Si-C, C-N and Si-C-N systems and its applications to high purity SiC production

DC Field Value Language
dc.contributor.authorYou, Zhimin-
dc.contributor.authorJiang, Zhouhua-
dc.contributor.authorJung, In-ho-
dc.date.accessioned2022-08-22T09:07:57Z-
dc.date.available2022-08-22T09:07:57Z-
dc.date.created2022-06-10-
dc.date.issued2022-09-
dc.identifier.citationJournal of the European Ceramic Society, Vol.42 No.12, pp.4793-4809-
dc.identifier.issn0955-2219-
dc.identifier.urihttps://hdl.handle.net/10371/184318-
dc.description.abstract© 2022 Elsevier LtdThermodynamic optimization of the Si-N, Si-C, C-N and Si-C-N systems were performed using the CALculation of PHAse Diagrams (CALPHAD) method based on critical evaluation of all available experimental data. The liquid and solid solutions within the Si-C-N system were described using the Modified Quasichemical Model and Compound Energy Formalism, respectively. The Gibbs energies of β-Si3N4 and β-SiC were carefully optimized to resolve inconsistencies among existing thermodynamic properties and phase equilibria data. The solubilities of C and N in both solid and liquid Si solutions were critically optimized. Besides, the solubility of N in β-SiC to form a narrow homogeneity range of β-Si(C,N) solid solution is considered for the first time in the present thermodynamic modeling. Based on the present thermodynamic database, experimentally unexplored phase diagrams and thermodynamic properties within the Si-C-N alloys were predicted. As an application of the database, the influences of various operation conditions on high purity SiC production using sublimation process were calculated.-
dc.language영어-
dc.publisherElsevier BV-
dc.titleCritical evaluation and thermodynamic optimization of the Si-N, Si-C, C-N and Si-C-N systems and its applications to high purity SiC production-
dc.typeArticle-
dc.identifier.doi10.1016/j.jeurceramsoc.2022.05.011-
dc.citation.journaltitleJournal of the European Ceramic Society-
dc.identifier.wosid000809838800003-
dc.identifier.scopusid2-s2.0-85130427284-
dc.citation.endpage4809-
dc.citation.number12-
dc.citation.startpage4793-
dc.citation.volume42-
dc.description.isOpenAccessN-
dc.contributor.affiliatedAuthorJung, In-ho-
dc.type.docTypeArticle-
dc.description.journalClass1-
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