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Cluster-type analogue memristor by engineering redox dynamics for high-performance neuromorphic computing
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kang, Jaehyun | - |
dc.contributor.author | Kim, Taeyoon | - |
dc.contributor.author | Hu, Suman | - |
dc.contributor.author | Kim, Jaewook | - |
dc.contributor.author | Kwak, Joon Young | - |
dc.contributor.author | Park, Jongkil | - |
dc.contributor.author | Park, Jong Keuk | - |
dc.contributor.author | Kim, Inho | - |
dc.contributor.author | Lee, Suyoun | - |
dc.contributor.author | Kim, Sangbum | - |
dc.contributor.author | Jeong, YeonJoo | - |
dc.date.accessioned | 2022-09-28T06:37:54Z | - |
dc.date.available | 2022-09-28T06:37:54Z | - |
dc.date.created | 2022-07-26 | - |
dc.date.issued | 2022-07 | - |
dc.identifier.citation | Nature Communications, Vol.13 No.1, p. 4040 | - |
dc.identifier.issn | 2041-1723 | - |
dc.identifier.uri | https://hdl.handle.net/10371/184538 | - |
dc.description.abstract | Memristors, or memristive devices, have attracted tremendous interest in neuromorphic hardware implementation. However, the high electric-field dependence in conventional filamentary memristors results in either digital-like conductance updates or gradual switching only in a limited dynamic range. Here, we address the switching parameter, the reduction probability of Ag cations in the switching medium, and ultimately demonstrate a cluster-type analogue memristor. Ti nanoclusters are embedded into densified amorphous Si for the following reasons: low standard reduction potential, thermodynamic miscibility with Si, and alloy formation with Ag. These Ti clusters effectively induce the electrochemical reduction activity of Ag cations and allow linear potentiation/depression in tandem with a large conductance range (similar to 244) and long data retention (similar to 99% at 1 hour). Moreover, according to the reduction potentials of incorporated metals (Pt, Ta, W, and Ti), the extent of linearity improvement is selectively tuneable. Image processing simulation proves that the Ti-4.8%:a-Si device can fully function with high accuracy as an ideal synaptic model. | - |
dc.language | 영어 | - |
dc.publisher | Nature Publishing Group | - |
dc.title | Cluster-type analogue memristor by engineering redox dynamics for high-performance neuromorphic computing | - |
dc.type | Article | - |
dc.identifier.doi | 10.1038/s41467-022-31804-4 | - |
dc.citation.journaltitle | Nature Communications | - |
dc.identifier.wosid | 000825090000001 | - |
dc.identifier.scopusid | 2-s2.0-85133994824 | - |
dc.citation.number | 1 | - |
dc.citation.startpage | 4040 | - |
dc.citation.volume | 13 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Kim, Sangbum | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
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