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High-Density, Localized Quantum Emitters in Strained 2D Semiconductors
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Gwangwoo | - |
dc.contributor.author | Kim, Hyong Min | - |
dc.contributor.author | Kumar, Pawan | - |
dc.contributor.author | Rahaman, Mahfujur | - |
dc.contributor.author | Stevens, Christopher E. | - |
dc.contributor.author | Jeon, Jonghyuk | - |
dc.contributor.author | Jo, Kiyoung | - |
dc.contributor.author | Kim, Kwan-Ho | - |
dc.contributor.author | Trainor, Nicholas | - |
dc.contributor.author | Zhu, Haoyue | - |
dc.contributor.author | Sohn, Byeong-Hyeok | - |
dc.contributor.author | Stach, Eric A. | - |
dc.contributor.author | Hendrickson, Joshua R. | - |
dc.contributor.author | Glavin, Nicholas R. | - |
dc.contributor.author | Suh, Joonki | - |
dc.contributor.author | Redwing, Joan M. | - |
dc.contributor.author | Jariwala, Deep | - |
dc.date.accessioned | 2022-09-30T05:49:54Z | - |
dc.date.available | 2022-09-30T05:49:54Z | - |
dc.date.created | 2022-07-12 | - |
dc.date.issued | 2022-06 | - |
dc.identifier.citation | ACS Nano, Vol.16 No.6, pp.9651-9659 | - |
dc.identifier.issn | 1936-0851 | - |
dc.identifier.uri | https://hdl.handle.net/10371/184830 | - |
dc.description.abstract | Two-dimensional chalcogenide semiconductors have recently emerged as a host material for quantum emitters of single photons. While several reports on defect-and strain-induced single-photon emission from 2D chalcogenides exist, a bottom-up, lithography-free approach to producing a high density of emitters remains elusive. Further, the physical properties of quantum emission in the case of strained 2D semiconductors are far from being understood. Here, we demonstrate a bottom-up, scalable, and lithography-free approach for creating large areas of localized emitters with high density (similar to 150 emitters/um(2)) in a WSe2 monolayer. We induce strain inside the WSe2 monolayer with high spatial density by conformally placing the WS(e)2 monolayer over a uniform array of Pt nanoparticles with a size of 10 nm. Cryogenic, time-resolved, and gate-tunable luminescence measurements combined with near-field luminescence spectroscopy suggest the formation of localized states in strained regions that emit single photons with a high spatial density. Our approach of using a metal nanoparticle array to generate a high density of strained quantum emitters will be applied to scalable, tunable, and versatile quantum light sources. | - |
dc.language | 영어 | - |
dc.publisher | American Chemical Society | - |
dc.title | High-Density, Localized Quantum Emitters in Strained 2D Semiconductors | - |
dc.type | Article | - |
dc.identifier.doi | 10.1021/acsnano.2c02974 | - |
dc.citation.journaltitle | ACS Nano | - |
dc.identifier.wosid | 000818979700001 | - |
dc.identifier.scopusid | 2-s2.0-85131748262 | - |
dc.citation.endpage | 9659 | - |
dc.citation.number | 6 | - |
dc.citation.startpage | 9651 | - |
dc.citation.volume | 16 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Sohn, Byeong-Hyeok | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
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