Publications
Detailed Information
Procedure Optimization for Organic Ambipolar Transistor: Laterally Aligned Micro n-/p-Channels via Dry Soft-Lithographic Process
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Oh, Sangyoon | - |
dc.contributor.author | Park, Sang Kyu | - |
dc.contributor.author | Park, Soo Young | - |
dc.date.accessioned | 2022-10-04T08:39:15Z | - |
dc.date.available | 2022-10-04T08:39:15Z | - |
dc.date.created | 2022-05-24 | - |
dc.date.issued | 2022-05 | - |
dc.identifier.citation | Advanced Electronic Materials, Vol.8 No.5, p. 2101041 | - |
dc.identifier.issn | 2199-160X | - |
dc.identifier.uri | https://hdl.handle.net/10371/185262 | - |
dc.description.abstract | In spite of the large potential of ambipolar transistors constituted of laterally aligned unipolar n-/p-channel semiconductors, it is hard to secure the full electrical performance of each semiconductor channel by the risk of intermixing which leads to low crystallinity. Here, a novel fabrication process of patterned taping is proposed which ensures the formation of sharp interface and thus preserving the original performance of individual channels—laterally aligned micro n-/p-channels via all-dry soft-lithographic process. Different from other bi-component active layer devices, such as vertically stacked n-/p-bilayer and n-/p-blend film, laterally aligned n-/p-channel of this work secures clear ambipolarity because both the n-/p-channels are directly laid over a common gate dielectric surface. Essentially, laterally aligned n-/p-channels constructed by patterned taping are free from lateral channel mixing or broadening effect different from other processes such as wet-processing and fine metal mask (FMM) patterning. In this work, a novel patterned taping method of laterally aligned n-/p-channel transistors and also their optimized transistor performances compared with other bi-component devices using the same set of n- and p-type semiconductor materials is demonstrated. © 2021 Wiley-VCH GmbH | - |
dc.language | 영어 | - |
dc.publisher | Wiley-VCH Verlag | - |
dc.title | Procedure Optimization for Organic Ambipolar Transistor: Laterally Aligned Micro n-/p-Channels via Dry Soft-Lithographic Process | - |
dc.type | Article | - |
dc.identifier.doi | 10.1002/aelm.202101041 | - |
dc.citation.journaltitle | Advanced Electronic Materials | - |
dc.identifier.wosid | 000734949700001 | - |
dc.identifier.scopusid | 2-s2.0-85122009712 | - |
dc.citation.number | 5 | - |
dc.citation.startpage | 2101041 | - |
dc.citation.volume | 8 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Park, Soo Young | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
- Appears in Collections:
- Files in This Item:
- There are no files associated with this item.
Item View & Download Count
Items in S-Space are protected by copyright, with all rights reserved, unless otherwise indicated.