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Monolithic integration of GaAs//InGaAs photodetectors for multicolor detection
Cited 2 time in
Web of Science
Cited 2 time in Scopus
- Authors
- Issue Date
- 2019-06
- Publisher
- IEEE
- Citation
- 2019 SYMPOSIUM ON VLSI TECHNOLOGY, pp.T248-T249
- Abstract
- Multicolor photodetectors (PDs) by using bulk p-i-n based visible GaAs and near-infrared (IR) InGaAs PD have been successfully fabricated via monolithic integration by wafer bonding and epitaxial lift-off. It showed high-performance individual operation comparable to that of bulk PDs with tight vertical alignment on a single substrate future high-resolution multicolor PDs. At the same time, it covered broad wavelength range from visible to IR.
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