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Reduced dopant-induced scattering in remote charge-transfer-doped MoS2 field-effect transistors

Cited 26 time in Web of Science Cited 24 time in Scopus
Authors

Jang, Juntae; Kim, Jae-Keun; Shin, Jiwon; Kim, Jaeyoung; Baek, Kyeong-Yoon; Park, Jaehyoung; Park, Seungmin; Kim, Young Duck; Parkin, Stuart S P; Kang, Keehoon; Cho, Kyungjune; Lee, Takhee

Issue Date
2022-09
Publisher
American Association for the Advancement of Science
Citation
Science Advances, Vol.8 No.38, p. eabn3181
Abstract
Efficient doping for modulating electrical properties of two-dimensional (2D) transition metal dichalcogenide (TMDC) semiconductors is essential for meeting the versatile requirements for future electronic and optoelectronic devices. Because doping of semiconductors, including TMDCs, typically involves generation of charged dopants that hinder charge transport, tackling Coulomb scattering induced by the externally introduced dopants remains a key challenge in achieving ultrahigh mobility 2D semiconductor systems. In this study, we demonstrated remote charge transfer doping by simply inserting a hexagonal boron nitride layer between MoS2 and solution-deposited n-type dopants, benzyl viologen. A quantitative analysis of temperature-dependent charge transport in remotely doped devices supports an effective suppression of the dopant-induced scattering relative to the conventional direct doping method. Our mechanistic investigation of the remote doping method promotes the charge transfer strategy as a promising method for material-level tailoring of electrical and optoelectronic devices based on TMDCs.
ISSN
2375-2548
URI
https://hdl.handle.net/10371/188889
DOI
https://doi.org/10.1126/sciadv.abn3181
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  • College of Engineering
  • Department of Materials Science & Engineering
Research Area Molecular doping in emerging semiconductors, Next-generation electronic devices, Transport phenomena in organic semiconductors

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