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Sub-cell characterization of two-terminal perovskite/silicon tandem solar cells

DC Field Value Language
dc.contributor.authorPark, Jae Hyun-
dc.contributor.authorJi, Su Geun-
dc.contributor.authorPark, Ik Jae-
dc.contributor.authorHwang, Sun Kyung-
dc.contributor.authorLim, Hyun Woo-
dc.contributor.authorKim, Jin Young-
dc.date.accessioned2023-01-09T02:48:02Z-
dc.date.available2023-01-09T02:48:02Z-
dc.date.created2022-12-06-
dc.date.issued2022-10-
dc.identifier.citationCell Reports Physical Science, Vol.3 No.10, p. 101076-
dc.identifier.issn2666-3864-
dc.identifier.urihttps://hdl.handle.net/10371/188953-
dc.description.abstractAlthough significant improvements in performance have been reported for monolithic perovskite/silicon tandem solar cells (PVSK/Si TSCs), the lack of simple electrical characterization methods impedes further development of monolithic TSCs. In this article, we report comprehensive electrical characterization methods that can accurately and easily analyze the sub-cells of two-terminal PVSK/Si TSCs. Using a highly efficient three-terminal PVSK/Si TSC conceived for the sub-cell analysis, fundamental electrical characterization methods, such as J-V characteristics, external quantum efficiency, impedance spectroscopy, and thermal admittance spectroscopy, are investigated to suggest a characterization platform for the sub-cell analysis of monolithic two-terminal PVSK/Si TSCs.-
dc.language영어-
dc.publisherElsevier-
dc.titleSub-cell characterization of two-terminal perovskite/silicon tandem solar cells-
dc.typeArticle-
dc.identifier.doi10.1016/j.xcrp.2022.101076-
dc.citation.journaltitleCell Reports Physical Science-
dc.identifier.wosid000877165200006-
dc.identifier.scopusid2-s2.0-85140074708-
dc.citation.number10-
dc.citation.startpage101076-
dc.citation.volume3-
dc.description.isOpenAccessY-
dc.contributor.affiliatedAuthorKim, Jin Young-
dc.type.docTypeArticle-
dc.description.journalClass1-
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