S-Space College of Engineering/Engineering Practice School (공과대학/대학원) Dept. of Materials Science and Engineering (재료공학부) Journal Papers (저널논문_재료공학부)
Origin of extra diffraction spots for high crystalline alpha-Ga2O3
- Issue Date
- American Institute of Physics Inc.
- AIP Advances, Vol.13 No.2, p. 025148
- This work has investigated the microstructure characteristics of high-quality alpha-Ga2O3 thin film grown on the Al2O3 single crystal substrate membrane. Hetero-epitaxial alpha Ga2O3 crystals reveal the formation of a three-fold symmetry at the initial stage of the growth by the oxygen template provided by the Al2O3. Inversion domains are found, and they have a 180 & DEG; inverted configuration from the surroundings. These IDs lead to extra diffraction spots when observed along  and .(c) 2023 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
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