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Interfacial modification in perovskite-based tandem solar cells

DC Field Value Language
dc.contributor.authorPark, Ik Jae-
dc.contributor.authorAn, Hyo Kyung-
dc.contributor.authorChang, Yuna-
dc.contributor.authorKim, Jin Young-
dc.date.accessioned2023-06-29T06:25:09Z-
dc.date.available2023-06-29T15:26:21Z-
dc.date.issued2023-05-20-
dc.identifier.citationNano Convergence, Vol.10:22ko_KR
dc.identifier.issn2196-5404-
dc.identifier.urihttps://hdl.handle.net/10371/194601-
dc.description.abstractAbstract
With photovoltaic performance of metal halide perovskite-based solar cells skyrocketing to approximately 26% and approaching the theoretical Shockley–Queisser limit of single junction solar cells, researchers are now exploring multi-junction tandem solar cells that use perovskite materials to achieve high efficiency next-generation photovoltaics. Various types of bottom subcells, including silicon solar cells used commercially in industry, chalcogenide thin film cells, and perovskite cells, have been combined with perovskite top subcells on the strength of facile fabrication methods based on solution processes. However, owing to the nature that photovoltages of the subcells are added up and the structure containing numerous layers, interfacial issues that cause open-circuit voltage (VOC) deficit need to be handled carefully. In addition,morphological issues or process compatibility make it difficult to fabricatesolution-processed perovskite top cells. In this paper, we summarize and review the fundamentals and strategies to overcome interfacial issues in tandem solar cells for high efficiency and stability confronting this field.

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ko_KR
dc.language.isoenko_KR
dc.publisherSpringerko_KR
dc.subjectPerovskites-
dc.subjectTandem-
dc.subjectInterfaces-
dc.subjectSolar cells-
dc.titleInterfacial modification in perovskite-based tandem solar cellsko_KR
dc.typeArticleko_KR
dc.identifier.doi10.1186/s40580-023-00374-6ko_KR
dc.citation.journaltitleNano Convergenceko_KR
dc.language.rfc3066en-
dc.rights.holderThe Author(s)-
dc.date.updated2023-05-21T03:11:39Z-
dc.citation.number22ko_KR
dc.citation.volume10ko_KR
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