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Analysis of failure of C-V characteristics of MIS structure with SiO2 passivation layer deposited on InSb substrate via Raman spectroscopy
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Seok, Chulkyun | - |
dc.contributor.author | Kim, Sujin | - |
dc.contributor.author | Lee, Jaeyel | - |
dc.contributor.author | Park, Sehun | - |
dc.contributor.author | Park, Yongjo | - |
dc.contributor.author | Yoon, Eui Joon | - |
dc.date.accessioned | 2023-07-14T04:18:17Z | - |
dc.date.available | 2023-07-14T04:18:17Z | - |
dc.date.created | 2023-07-12 | - |
dc.date.issued | 2014-04 | - |
dc.identifier.citation | Materials Research Society Symposium - Proceedings, Vol.1670, p. 111283 | - |
dc.identifier.issn | 0272-9172 | - |
dc.identifier.uri | https://hdl.handle.net/10371/195165 | - |
dc.description.abstract | The effect of interfacial phases on the electrical properties of Au/Ti/SiO2/InSb metal-insulator (oxide)-semiconductor (MIS or MOS) structures was investigated by capacitance-voltage (C-V) measurements. With increasing the deposition temperature of silicon oxide from 100 to 350°C using PECVD, the change in the interfacial phases between SiO2 and InSb were analyzed by resonant Raman spectroscopy to verify the relation between the breakdown of C-V characteristics and the change of interfacial phases. The shape of C-V characteristics was dramatically changed when the deposition temperature was above 300°C. The C-V measurements and Raman spectra represented that elemental Sb accumulation resulted from the chemical reaction of Sb oxide with InSb substrate was responsible for the failure in the C-V characteristics of MIS structure. Copyright © 2014 Materials Research Society. | - |
dc.language | 영어 | - |
dc.publisher | Materials Research Society | - |
dc.title | Analysis of failure of C-V characteristics of MIS structure with SiO2 passivation layer deposited on InSb substrate via Raman spectroscopy | - |
dc.type | Article | - |
dc.citation.journaltitle | Materials Research Society Symposium - Proceedings | - |
dc.identifier.scopusid | 2-s2.0-84924362710 | - |
dc.citation.startpage | 111283 | - |
dc.citation.volume | 1670 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Yoon, Eui Joon | - |
dc.description.journalClass | 1 | - |
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