Phosphine oxide modulator-ameliorated hole injection for blue perovskite light-emitting diodes

Abstract

Despite the enormous developments in perovskite light-emitting diodes (PeLEDs) recently, obtaining efficient blue PeLEDs is still considered a critical challenge due to the non-radiative recombination and unbalanced charge injection caused by the unmatched carrier mobility and the deep hole-injection barrier between the hole-transport layer (HTL) and the emissive layer (EML). Herein, we incorporate tris(4-trifluoromethylphenyl)phosphine oxide (TMFPPO), obtained through a facile oxidation synthesis process, into poly(9-vinylcarbazole) (PVK). TMFPPO incorporation modulated the energy level and hole mobility of the binary-blend HTLs to eliminate the hole-injection barrier and balance the charge injection within the EML. Consequently, the blue PeLEDs with blended HTL presented an external quantum efficiency (EQE) of 7.23% centred at 477 nm, which was much higher than the EQE of a PVK device (4.95%). Our results demonstrate that modulating the energy level and charge injection of the HTL in the device is a promising method for obtaining efficient blue PeLEDs. TMFPPO is developed and incorporated into PVK to modulate the hole mobility and energy level of the hole-transport layer, giving rise to a barrier-free blue perovskite light-emitting diode and an enhancement of the EQE from 4.95 to 7.23% at 477 nm.