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Piezo strain-controlled phase transition in single-crystalline Mott switches for threshold-manipulated leaky integrate-and-fire neurons

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dc.contributor.authorLee, Dong Kyu-
dc.contributor.authorLee, Sungwon-
dc.contributor.authorSim, Hyeji-
dc.contributor.authorPark, Yunkyu-
dc.contributor.authorChoi, Si-Young-
dc.contributor.authorSon, Junwoo-
dc.date.accessioned2024-05-03T07:04:57Z-
dc.date.available2024-05-03T07:04:57Z-
dc.date.created2024-05-01-
dc.date.created2024-05-01-
dc.date.issued2024-04-
dc.identifier.citationScience Advances, Vol.10 No.14-
dc.identifier.issn2375-2548-
dc.identifier.urihttps://hdl.handle.net/10371/200906-
dc.description.abstractElectrical manipulation of the metal-insulator transition (MIT) in quantum materials has attracted considerable attention toward the development of ultracompact neuromorphic devices because of their stimuli-triggered transformations. VO2 is expected to undergo abrupt electronic phase transition by piezo strain near room temperature; however, the unrestricted integration of defect-free VO2 films on piezoelectric substrates is required to fully exploit this emerging phenomenon in oxide heterostructures. Here, we demonstrate the integration of single-crystalline VO2 films on highly lattice-mismatched PMN-PT piezoelectric substrates using a single-crystal TiO2-nanomembrane (NM) template. Using our strategy on heterogeneous integration, single-crystal-like steep transition was observed in the defect-free VO2 films on TiO2-NM-PMN-PT. Unprecedented T-MI modulation (5.2 kelvin) and isothermal resistance of VO2 [Delta R/R (E-g) approximate to 18,000% at 315 kelvin] were achieved by the efficient strain transfer-induced MIT, which cannot be achieved using directly grown VO2/PMN-PT substrates. Our results provide a fundamental strategy to realize a single-crystalline artificial heterojunction for promoting the application of artificial neurons using emergent materials.-
dc.language영어-
dc.publisherAmerican Association for the Advancement of Science-
dc.titlePiezo strain-controlled phase transition in single-crystalline Mott switches for threshold-manipulated leaky integrate-and-fire neurons-
dc.typeArticle-
dc.identifier.doi10.1126/sciadv.adk8836-
dc.citation.journaltitleScience Advances-
dc.identifier.wosid001198102900015-
dc.identifier.scopusid2-s2.0-85189828603-
dc.citation.number14-
dc.citation.volume10-
dc.description.isOpenAccessY-
dc.contributor.affiliatedAuthorSon, Junwoo-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.subject.keywordPlusMETAL-INSULATOR-TRANSITION-
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