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Piezo strain-controlled phase transition in single-crystalline Mott switches for threshold-manipulated leaky integrate-and-fire neurons
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Dong Kyu | - |
dc.contributor.author | Lee, Sungwon | - |
dc.contributor.author | Sim, Hyeji | - |
dc.contributor.author | Park, Yunkyu | - |
dc.contributor.author | Choi, Si-Young | - |
dc.contributor.author | Son, Junwoo | - |
dc.date.accessioned | 2024-05-03T07:04:57Z | - |
dc.date.available | 2024-05-03T07:04:57Z | - |
dc.date.created | 2024-05-01 | - |
dc.date.created | 2024-05-01 | - |
dc.date.issued | 2024-04 | - |
dc.identifier.citation | Science Advances, Vol.10 No.14 | - |
dc.identifier.issn | 2375-2548 | - |
dc.identifier.uri | https://hdl.handle.net/10371/200906 | - |
dc.description.abstract | Electrical manipulation of the metal-insulator transition (MIT) in quantum materials has attracted considerable attention toward the development of ultracompact neuromorphic devices because of their stimuli-triggered transformations. VO2 is expected to undergo abrupt electronic phase transition by piezo strain near room temperature; however, the unrestricted integration of defect-free VO2 films on piezoelectric substrates is required to fully exploit this emerging phenomenon in oxide heterostructures. Here, we demonstrate the integration of single-crystalline VO2 films on highly lattice-mismatched PMN-PT piezoelectric substrates using a single-crystal TiO2-nanomembrane (NM) template. Using our strategy on heterogeneous integration, single-crystal-like steep transition was observed in the defect-free VO2 films on TiO2-NM-PMN-PT. Unprecedented T-MI modulation (5.2 kelvin) and isothermal resistance of VO2 [Delta R/R (E-g) approximate to 18,000% at 315 kelvin] were achieved by the efficient strain transfer-induced MIT, which cannot be achieved using directly grown VO2/PMN-PT substrates. Our results provide a fundamental strategy to realize a single-crystalline artificial heterojunction for promoting the application of artificial neurons using emergent materials. | - |
dc.language | 영어 | - |
dc.publisher | American Association for the Advancement of Science | - |
dc.title | Piezo strain-controlled phase transition in single-crystalline Mott switches for threshold-manipulated leaky integrate-and-fire neurons | - |
dc.type | Article | - |
dc.identifier.doi | 10.1126/sciadv.adk8836 | - |
dc.citation.journaltitle | Science Advances | - |
dc.identifier.wosid | 001198102900015 | - |
dc.identifier.scopusid | 2-s2.0-85189828603 | - |
dc.citation.number | 14 | - |
dc.citation.volume | 10 | - |
dc.description.isOpenAccess | Y | - |
dc.contributor.affiliatedAuthor | Son, Junwoo | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.subject.keywordPlus | METAL-INSULATOR-TRANSITION | - |
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