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The limits of electromechanical coupling in highly-tensile strained germanium

Cited 4 time in Web of Science Cited 4 time in Scopus

Ran, Sijia; Glen, Tom S.; Li, Bei; Shi, Dongliang; Choi, In-Suk; Fitzgerald, Eugene A.; Boles, Steven T.

Issue Date
American Chemical Society
Nano Letters, Vol.20 No.5, pp.3492-3498
Speculations regarding electronic and photonic properties of strained germanium (Ge) have perpetually put it into contention for next-generation devices since the start of the information age. Here, the electromechanical coupling of <111> Ge nanowires (NWs) is reported from unstrained conditions to the ultimate tensile strength. Under tensile strain, the conductivity of the NW is enhanced exponentially, reaching an enhancement factor of , similar to 130 at similar to 3.5% of strain. Under strains larger than similar to 2.5%, the electrical properties of Ge also exhibit a dependence on the electric field. The conductivity can be further enhanced by similar to 2.2X with a high bias condition at similar to 3.5% of strain. Cyclic loading tests confirm that the observed electromechanical responses are repeatable, reversible, and related to the changing electronic band structure. These tests reveal the excellent prospects for utilizing strained Ge NWs in photodetector or piezoelectronic transistor applications, but significant challenges remain to realize strict direct band gap devices.
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Related Researcher

  • College of Engineering
  • Department of Materials Science & Engineering
Research Area High Temperature Alloys, High Strength , Nano Mechanics and Nano Structure Design for Ultra Strong Materials, Shape and Pattern Design for Engineering Materials


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