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Atom-by-atom imaging of moiré transformations in 2D transition metal dichalcogenides : Atom-by-atom imaging of moiré transformations in 2D transition metal dichalcogenides

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dc.contributor.authorZhang, Yichao-
dc.contributor.authorBaek, Ji-Hwan-
dc.contributor.authorLee, Chia-Hao-
dc.contributor.authorJung, Yeonjoon-
dc.contributor.authorHong, Seong Chul-
dc.contributor.authorNolan, Gillian-
dc.contributor.authorWatanabe, Kenji-
dc.contributor.authorTaniguchi, Takashi-
dc.contributor.authorLee, Gwan-Hyoung-
dc.contributor.authorHuang, Pinshane Y.-
dc.date.accessioned2024-05-14T07:38:28Z-
dc.date.available2024-05-14T07:38:28Z-
dc.date.created2024-04-16-
dc.date.created2024-04-16-
dc.date.created2024-04-16-
dc.date.issued2024-03-
dc.identifier.citationScience Advances, Vol.10 No.13, p. eadk1874-
dc.identifier.issn2375-2548-
dc.identifier.urihttps://hdl.handle.net/10371/202052-
dc.description.abstractUnderstanding the atomic-scale mechanisms that govern the structure of interfaces is critical across materials systems but particularly so for two-dimensional (2D) moiré materials. Here, we image, atom-by-atom, the thermally induced structural evolution of twisted bilayer transition metal dichalcogenides using in situ transmission electron microscopy. We observe low-temperature, local conversion of moiré superlattice into nanoscale aligned domains. Unexpectedly, this process occurs by nucleating a new grain within one monolayer, whose crystal orientation is templated by the other. The aligned domains grow through collective rotation of moiré supercells and hopping of 5|7 defect pairs at moiré boundaries. This provides mechanistic insight into the atomic-scale interactions controlling moiré structures and illustrates the potential to pattern interfacial structure and properties of 2D materials at the nanoscale.-
dc.language영어-
dc.publisherAmerican Association for the Advancement of Science-
dc.titleAtom-by-atom imaging of moiré transformations in 2D transition metal dichalcogenides-
dc.title.alternativeAtom-by-atom imaging of moiré transformations in 2D transition metal dichalcogenides-
dc.typeArticle-
dc.identifier.doi10.1126/sciadv.adk1874-
dc.citation.journaltitleScience Advances-
dc.identifier.wosid001193309500019-
dc.identifier.scopusid2-s2.0-85189417067-
dc.citation.number13-
dc.citation.startpageeadk1874-
dc.citation.volume10-
dc.description.isOpenAccessN-
dc.contributor.affiliatedAuthorLee, Gwan-Hyoung-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.subject.keywordPlusBILAYER-
dc.subject.keywordPlusMICROSCOPY-
dc.subject.keywordPlusDEFECTS-
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Related Researcher

  • College of Engineering
  • Department of Materials Science & Engineering
Research Area 2D materials, 2차원 물질, Smiconductor process, semiconductor devices, 반도체 공정, 반도체 소자

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