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Optical grade transformation of monolayer transition metal dichalcogenides <i>via</i> encapsulation annealing

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Ryu, Huije; Hong, Seong Chul; Kim, Kangwon; Jung, Yeonjoon; Lee, Yangjin; Lee, Kihyun; Kim, Youngbum; Kim, Hyunjun; Watanabe, Kenji; Taniguchi, Takashi; Kim, Jeongyong; Kim, Kwanpyo; Cheong, Hyeonsik; Lee, Gwan-Hyoung

Issue Date
Royal Society of Chemistry
Nanoscale, Vol.16 No.11, pp.5836-5844
Monolayer transition metal dichalcogenides (TMDs) have emerged as highly promising candidates for optoelectronic applications due to their direct band gap and strong light-matter interactions. However, exfoliated TMDs have demonstrated optical characteristics that fall short of expectations, primarily because of significant defects and associated doping in the synthesized TMD crystals. Here, we report the improvement of optical properties in monolayer TMDs of MoS2, MoSe2, WS2, and WSe2, by hBN-encapsulation annealing. Monolayer WSe2 showed 2000% enhanced photoluminescence quantum yield (PLQY) and 1000% increased lifetime after encapsulation annealing at 1000 degrees C, which are attributed to dominant radiative recombination of excitons through dedoping of monolayer TMDs. Furthermore, after encapsulation annealing, the transport characteristics of monolayer WS2 changed from n-type to ambipolar, along with an enhanced hole transport, which also support dedoping of annealed TMDs. This work provides an innovative approach to elevate the optical grade of monolayer TMDs, enabling the fabrication of high-performance optoelectronic devices.
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  • College of Engineering
  • Department of Materials Science & Engineering
Research Area 2D materials, 2차원 물질, Smiconductor process, semiconductor devices, 반도체 공정, 반도체 소자


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