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Reversible Transition of Semiconducting PtSe<sub>2</sub> and Metallic PtTe<sub>2</sub> for Scalable All-2D Edge-Contacted FETs
DC Field | Value | Language |
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dc.contributor.author | Han, Sang Sub | - |
dc.contributor.author | Sattar, Shahid | - |
dc.contributor.author | Kireev, Dmitry | - |
dc.contributor.author | Shin, June-Chul | - |
dc.contributor.author | Bae, Tae-Sung | - |
dc.contributor.author | Ryu, Hyeon Ih | - |
dc.contributor.author | Cao, Justin | - |
dc.contributor.author | Shum, Alex Ka | - |
dc.contributor.author | Kim, Jung Han | - |
dc.contributor.author | Canali, Carlo Maria | - |
dc.contributor.author | Akinwande, Deji | - |
dc.contributor.author | Lee, Gwan-Hyoung | - |
dc.contributor.author | Chung, Hee-Suk | - |
dc.contributor.author | Jung, Yeonwoong | - |
dc.date.accessioned | 2024-05-14T07:38:37Z | - |
dc.date.available | 2024-05-14T07:38:37Z | - |
dc.date.created | 2024-02-22 | - |
dc.date.created | 2024-02-22 | - |
dc.date.issued | 2023-12 | - |
dc.identifier.citation | Nano Letters, Vol.24 No.6, pp.1891-1900 | - |
dc.identifier.issn | 1530-6984 | - |
dc.identifier.uri | https://hdl.handle.net/10371/202055 | - |
dc.description.abstract | Two-dimensional (2D) transition metal dichalcogenide (TMD) layers are highly promising as field-effect transistor (FET) channels in the atomic-scale limit. However, accomplishing this superiority in scaled-up FETs remains challenging due to their van der Waals (vdW) bonding nature with respect to conventional metal electrodes. Herein, we report a scalable approach to fabricate centimeter-scale all-2D FET arrays of platinum diselenide (PtSe2) with in-plane platinum ditelluride (PtTe2) edge contacts, mitigating the aforementioned challenges. We realized a reversible transition between semiconducting PtSe2 and metallic PtTe2 via a low-temperature anion exchange reaction compatible with the back-end-of-line (BEOL) processes. All-2D PtSe2 FETs seamlessly edge-contacted with transited metallic PtTe2 exhibited significant performance improvements compared to those with surface-contacted gold electrodes, e.g., an increase of carrier mobility and on/off ratio by over an order of magnitude, achieving a maximum hole mobility of similar to 50.30 cm(2) V-1 s(-1) at room temperature. This study opens up new opportunities toward atomically thin 2D-TMD-based circuitries with extraordinary functionalities. | - |
dc.language | 영어 | - |
dc.publisher | American Chemical Society | - |
dc.title | Reversible Transition of Semiconducting PtSe2 and Metallic PtTe2 for Scalable All-2D Edge-Contacted FETs | - |
dc.type | Article | - |
dc.identifier.doi | 10.1021/acs.nanolett.3c03666 | - |
dc.citation.journaltitle | Nano Letters | - |
dc.identifier.wosid | 001158890700001 | - |
dc.identifier.scopusid | 2-s2.0-85183091025 | - |
dc.citation.endpage | 1900 | - |
dc.citation.number | 6 | - |
dc.citation.startpage | 1891 | - |
dc.citation.volume | 24 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Lee, Gwan-Hyoung | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.subject.keywordPlus | PLATINUM DISELENIDE | - |
dc.subject.keywordPlus | 2D PTTE2 | - |
dc.subject.keywordPlus | REDUCTION | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordAuthor | 2D PtTe2 layer | - |
dc.subject.keywordAuthor | 2D PtSe2 layer | - |
dc.subject.keywordAuthor | anion exchange | - |
dc.subject.keywordAuthor | chemical transition | - |
dc.subject.keywordAuthor | edge contact | - |
dc.subject.keywordAuthor | 2D TMD heterostructure | - |
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