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In-plane anisotropy of graphene by strong interlayer interactions with van der Waals epitaxially grown MoO3

Cited 3 time in Web of Science Cited 4 time in Scopus
Authors

Kim, Hangyel; Kim, Jong Hun; Kim, Jungcheol; Park, Jejune; Park, Kwanghee; Baek, Ji-Hwan; Shin, June-Chul; Lee, Hyeongseok; Son, Jangyup; Ryu, Sunmin; Son, Young-Woo; Cheong, Hyeonsik; Lee, Gwan-Hyoung

Issue Date
2023-06
Publisher
American Association for the Advancement of Science
Citation
Science Advances, Vol.9 No.23, p. eadg6696
Abstract
van der Waals (vdW) epitaxy can be used to grow epilayers with different symmetries on graphene, thereby imparting unprecedented properties in graphene owing to formation of anisotropic superlattices and strong interlayer interactions. Here, we report in-plane anisotropy in graphene by vdW epitaxially grown molybdenum trioxide layers with an elongated superlattice. The grown molybdenum trioxide layers led to high p-doping of the underlying graphene up to p = 1.94 × 1013 cm-2 regardless of the thickness of molybdenum trioxide, maintaining a high carrier mobility of 8155 cm2 V-1 s-1. Molybdenum trioxide-induced compressive strain in graphene increased up to -0.6% with increasing molybdenum trioxide thickness. The asymmetrical band distortion of molybdenum trioxide-deposited graphene at the Fermi level led to in-plane electrical anisotropy with a high conductance ratio of 1.43 owing to the strong interlayer interaction of molybdenum trioxide-graphene. Our study presents a symmetry engineering method to induce anisotropy in symmetric two-dimensional (2D) materials via the formation of asymmetric superlattices with epitaxially grown 2D layers.
ISSN
2375-2548
URI
https://hdl.handle.net/10371/202060
DOI
https://doi.org/10.1126/sciadv.adg6696
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  • College of Engineering
  • Department of Materials Science & Engineering
Research Area 2D materials, 2차원 물질, Smiconductor process, semiconductor devices, 반도체 공정, 반도체 소자

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