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Quasi-van der Waals Epitaxial Recrystallization of a Gold Thin Film into Crystallographically Aligned Single Crystals

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dc.contributor.authorLee, Yunah-
dc.contributor.authorChang, Yunyeong-
dc.contributor.authorRyu, Huije-
dc.contributor.authorKim, Jong Hun-
dc.contributor.authorWatanabe, Kenji-
dc.contributor.authorTaniguchi, Takashi-
dc.contributor.authorKim, Miyoung-
dc.contributor.authorLee, Gwan-Hyoung-
dc.date.accessioned2024-05-14T07:39:14Z-
dc.date.available2024-05-14T07:39:14Z-
dc.date.created2023-02-13-
dc.date.created2023-02-13-
dc.date.issued2022-12-
dc.identifier.citationACS Applied Materials and Interfaces, Vol.15 No.4, pp.6092-6097-
dc.identifier.issn1944-8244-
dc.identifier.urihttps://hdl.handle.net/10371/202065-
dc.description.abstractHeterointerfaces between two-dimensional (2D) materials and bulk metals determine the electrical and optical properties of their heterostructures. Although deposition of various metals on 2D materials has been studied, there is still a lack of studies on the interaction at the van der Waals (vdW) heterointerface between 2D materials and metals. Here, we report quasi-van der Waals (qvdW) epitaxial recrystallization of a gold thin film into crystallographically aligned single crystals by encapsulation annealing of a gold thin film with hexagonal boron nitride (hBN). When a polycrystalline gold thin film passivated with hBN was annealed, it was recrystallized into single gold crystals with a planar shape and crystallographic alignment with hBN due to a strong interaction between the gold film and hBN at the heterointerface. This reflects that a weak vdW force at the heterointerface is sufficiently strong to induce epitaxial recrystallization. Using this method, we fabricated a gold nanocrystal array with the same crystalline orientation and smooth top surface. Our work demonstrates a new method for epitaxial recrystallization of bulk crystals and provides a deep understanding of the interaction at the vdW heterointerface of 2D materials and metals.-
dc.language영어-
dc.publisherAmerican Chemical Society-
dc.titleQuasi-van der Waals Epitaxial Recrystallization of a Gold Thin Film into Crystallographically Aligned Single Crystals-
dc.typeArticle-
dc.identifier.doi10.1021/acsami.2c18514-
dc.citation.journaltitleACS Applied Materials and Interfaces-
dc.identifier.wosid000906839800001-
dc.identifier.scopusid2-s2.0-85145465972-
dc.citation.endpage6097-
dc.citation.number4-
dc.citation.startpage6092-
dc.citation.volume15-
dc.description.isOpenAccessN-
dc.contributor.affiliatedAuthorLee, Gwan-Hyoung-
dc.type.docTypeArticle; Early Access-
dc.description.journalClass1-
dc.subject.keywordPlusRAMAN-SCATTERING-
dc.subject.keywordPlusNANOSTRUCTURES-
dc.subject.keywordPlusEVOLUTION-
dc.subject.keywordPlusGRAPHITE-
dc.subject.keywordPlusCONTACTS-
dc.subject.keywordPlusGRAPHENE-
dc.subject.keywordPlusGROWTH-
dc.subject.keywordPlusMETALS-
dc.subject.keywordPlusMOS2-
dc.subject.keywordAuthorquasi-van der Waals epitaxy-
dc.subject.keywordAuthorrecrystallization-
dc.subject.keywordAuthorheterointerface-
dc.subject.keywordAuthorgold nanocrystals-
dc.subject.keywordAuthorcrystallographic alignment-
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  • College of Engineering
  • Department of Materials Science & Engineering
Research Area 2D materials, 2차원 물질, Smiconductor process, semiconductor devices, 반도체 공정, 반도체 소자

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