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Modulation of optical and electrical properties in hexagonal boron nitride by defects induced via oxygen plasma treatment

Cited 9 time in Web of Science Cited 9 time in Scopus
Authors

Na, Youn Sung; Kim, Jong Hun; Kang, Sojung; Jeong, Jae Hwan; Park, Sunho; Kim, Dae Hyun; Ihm, Kyuwook; Watanabe, Kenji; Taniguchi, Takashi; Kwon, Young-Kyun; Kim, Young Duck; Lee, Gwan-Hyoung

Issue Date
2021-10
Publisher
Institute of Physics Publishing (IOP)
Citation
2D Materials, Vol.8 No.4, p. 045041
Abstract
Defects in hexagonal boron nitride (hBN) have attracted much attention since they are effectively used for nanoelectronics, such as single-photon emitters or memristors. The method for generating and controlling hBN defects is important because the defects are critical factors determining the optical and electrical properties of hBN. Here, we demonstrate the modulation of optical and electrical properties of hBN by defects generated via mild oxygen plasma treatment. The photoluminescence peaks related to defects were observed at a broad range (similar to 3.8 eV), and the current of plasma-treated hBN flow at the lower threshold voltage compared to the as-exfoliated hBN due to the formation of defect paths inside the hBN structure. We also demonstrate that the bandgap structure of hBN can be tuned by the oxygen plasma treatment. Our findings are useful for the stable and reliable fabrication of two-dimensional electronic devices using hBN in the future.
ISSN
2053-1583
URI
https://hdl.handle.net/10371/202071
DOI
https://doi.org/10.1088/2053-1583/ac2c10
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  • College of Engineering
  • Department of Materials Science & Engineering
Research Area 2D materials, 2D crystal structures , 2D materials and fabrication processing, Advanced battery materials, Next-generation electronic devices

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