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Phonon-assisted carrier transport through a lattice-mismatched interface

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dc.contributor.authorYoon, Hyong Seo-
dc.contributor.authorOh, Juyeong-
dc.contributor.authorPark, Jae Young-
dc.contributor.authorKang, JeongSeob-
dc.contributor.authorKwon, Junyoung-
dc.contributor.authorCusati, Teresa-
dc.contributor.authorFiori, Gianluca-
dc.contributor.authorIannaccone, Giuseppe-
dc.contributor.authorFortunelli, Alessandro-
dc.contributor.authorOzcelik, V. Ongun-
dc.contributor.authorLee, Gwan-Hyoung-
dc.contributor.authorLow, Tony-
dc.contributor.authorJun, Seong Chan-
dc.date.accessioned2024-05-14T07:41:40Z-
dc.date.available2024-05-14T07:41:40Z-
dc.date.created2020-01-20-
dc.date.created2020-01-20-
dc.date.issued2019-04-
dc.identifier.citationNPG Asia Materials, Vol.11 No.1, p. 14-
dc.identifier.issn1884-4049-
dc.identifier.urihttps://hdl.handle.net/10371/202098-
dc.description.abstractMoS2 typically exhibits unconventional layer-thickness-dependent electronic properties. It also exhibits layer-dependent band structures including indirect-to-direct band transitions, owing to which the electronic and carrier transport properties of a lattice-mismatched, conducting, two-dimensional junction are distinct with the naturally stepwise junction behaving as a 1D junction. We found distinguishable effects at the interface of vertically stacked MoS2. The results revealed that misorientationally stacked layers exhibited significantly low junction resistance and independent energy bandgaps without bending owing to their effectively decoupled behavior. Further, phonon-assisted carriers dominantly affected the lattice-mismatched interface owing to its low junction resistance, as determined via low-temperature measurement. Our results could facilitate the realization of high-performance MoS2 transistors with small contact resistances caused by lattice mismatching.-
dc.language영어-
dc.publisherNature Publishing Group-
dc.titlePhonon-assisted carrier transport through a lattice-mismatched interface-
dc.typeArticle-
dc.identifier.doi10.1038/s41427-019-0113-2-
dc.citation.journaltitleNPG Asia Materials-
dc.identifier.wosid000466716200001-
dc.identifier.scopusid2-s2.0-85064049159-
dc.citation.number1-
dc.citation.startpage14-
dc.citation.volume11-
dc.description.isOpenAccessY-
dc.contributor.affiliatedAuthorLee, Gwan-Hyoung-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.subject.keywordPlusDIRECT GROWTH-
dc.subject.keywordPlusWORK FUNCTION-
dc.subject.keywordPlusMOS2-
dc.subject.keywordPlusHETEROSTRUCTURES-
dc.subject.keywordPlusTRANSITION-
dc.subject.keywordPlusGRAPHENE-
dc.subject.keywordPlusCONTACT-
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  • College of Engineering
  • Department of Materials Science & Engineering
Research Area 2D materials, 2차원 물질, Smiconductor process, semiconductor devices, 반도체 공정, 반도체 소자

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