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Single-crystalline nanobelts composed of transition metal ditellurides

Cited 18 time in Web of Science Cited 18 time in Scopus
Authors

Kwak, Jinsung; Jo, Yongsu; Song, Seunguk; Kim, Jung Hwa; Kim, Se-Yang; Lee, Jae-Ung; Lee, Sungwoo; Park, Jungmin; Kim, Kangwon; Lee, Gun-Do; Yoo, Jung-Woo; Kim, Sung Youb; Kong, Young-Min; Lee, Gwan Hyoung; Lee, Wan-Gyu; Park, Jucheol; Xu, Xiaodong; Cheong, Hyeonsik; Yoon, Euijoon; Lee, Zonghoon; Kwon, Soon-Yong

Issue Date
2018-07
Publisher
United Nations Industrial Developement Organization
Citation
Advanced Materials, Vol.30 No.30, p. 1707260
Abstract
Following the celebrated discovery of graphene, considerable attention has been directed toward the rich spectrum of properties offered by van der Waals crystals. However, studies have been largely limited to their 2D properties due to lack of 1D structures. Here, the growth of high-yield, single-crystalline 1D nanobelts composed of transition metal ditellurides at low temperatures (T 500 degrees C) and in short reaction times (t 10 min) via the use of tellurium-rich eutectic metal alloys is reported. The synthesized semimetallic 1D products are highly pure, stoichiometric, structurally uniform, and free of defects, resulting in high electrical performances. Furthermore, complete compositional tuning of the ternary ditelluride nanobelts is achieved with suppressed phase separation, applicable to the creation of unprecedented low-dimensional materials/devices. This approach may inspire new growth/fabrication strategies of 1D layered nanostructures, which may offer unique properties that are not available in other materials.
ISSN
0935-9648
URI
https://hdl.handle.net/10371/202105
DOI
https://doi.org/10.1002/adma.201707260
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  • College of Engineering
  • Department of Materials Science & Engineering
Research Area 2D materials, 2차원 물질, Smiconductor process, semiconductor devices, 반도체 공정, 반도체 소자

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