Operando Study of Thermal Oxidation of Monolayer MoS2

Abstract

Monolayer MoS2 is a promising semiconductor to overcome the physical dimension limits of microelectronic devices. Understanding the thermochemical stability of MoS2 is essential since these devices generate heat and are susceptible to oxidative environments. Herein, the promoting effect of molybdenum oxides (MoOx) particles on the thermal oxidation of MoS2 monolayers is shown by employing operando X-ray absorption spectroscopy, ex situ scanning electron microscopy and X-ray photoelectron spectroscopy. The study demonstrates that chemical vapor deposition-grown MoS2 monolayers contain intrinsic MoOx and are quickly oxidized at 100 degrees C (3 vol% O-2/He), in contrast to previously reported oxidation thresholds (e.g., 250 degrees C, t <= 1 h in the air). Otherwise, removing MoOx increases the thermal oxidation onset temperature of monolayer MoS2 to 300 degrees C. These results indicate that MoOx promote oxidation. An oxide-free lattice is critical to the long-term stability of monolayer MoS2 in state-of-the-art 2D electronic, optical, and catalytic applications.