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Inelastic carrier lifetime in bilayer graphene
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Park, Cheol-Hwan | - |
| dc.contributor.author | Giustino, Feliciano | - |
| dc.contributor.author | Spataru, Catalin D. | - |
| dc.contributor.author | Cohen, Marvin L. | - |
| dc.contributor.author | Louie, Steven G. | - |
| dc.date.accessioned | 2024-05-16T01:17:04Z | - |
| dc.date.available | 2024-05-16T01:17:04Z | - |
| dc.date.created | 2023-05-10 | - |
| dc.date.created | 2023-05-10 | - |
| dc.date.issued | 2012-01 | - |
| dc.identifier.citation | Applied Physics Letters, Vol.100 No.3, p. 032106 | - |
| dc.identifier.issn | 0003-6951 | - |
| dc.identifier.uri | https://hdl.handle.net/10371/202343 | - |
| dc.description.abstract | We present a first-principles calculation of the inelastic carrier lifetimes in pristine and doped bilayer graphene. The scattering rate arising from electron-electron interactions is smaller than that in graphene by 20-40% on average, and is highly anisotropic. On the other hand, the scattering rate arising from electron-phonon interactions is similar in magnitude to that in graphene and is isotropic. © 2012 American Institute of Physics. | - |
| dc.language | 영어 | - |
| dc.publisher | American Institute of Physics | - |
| dc.title | Inelastic carrier lifetime in bilayer graphene | - |
| dc.type | Article | - |
| dc.identifier.doi | 10.1063/1.3675877 | - |
| dc.citation.journaltitle | Applied Physics Letters | - |
| dc.identifier.wosid | 000299386800028 | - |
| dc.identifier.scopusid | 2-s2.0-84856419804 | - |
| dc.citation.number | 3 | - |
| dc.citation.startpage | 032106 | - |
| dc.citation.volume | 100 | - |
| dc.description.isOpenAccess | N | - |
| dc.contributor.affiliatedAuthor | Park, Cheol-Hwan | - |
| dc.type.docType | Article | - |
| dc.description.journalClass | 1 | - |
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- College of Natural Sciences
- Department of Physics and Astronomy
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