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Reversible Oxidative p-Doping in 2D Tin Halide Perovskite Field-Effect Transistors
DC Field | Value | Language |
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dc.contributor.author | Kim, Yeeun | - |
dc.contributor.author | Woo, Jaeyong | - |
dc.contributor.author | Jung, Young-Kwang | - |
dc.contributor.author | Ahn, Heebeom | - |
dc.contributor.author | Kim, Inha | - |
dc.contributor.author | Reo, Youjin | - |
dc.contributor.author | Lim, Hyungbin | - |
dc.contributor.author | Lee, Changjun | - |
dc.contributor.author | Lee, Jonghoon | - |
dc.contributor.author | Kim, Yongjin | - |
dc.contributor.author | Choi, Hyeonmin | - |
dc.contributor.author | Lee, Min-Hyun | - |
dc.contributor.author | Lee, Jeongjae | - |
dc.contributor.author | Stranks, Samuel D. | - |
dc.contributor.author | Sirringhaus, Henning | - |
dc.contributor.author | Noh, Yong-Young | - |
dc.contributor.author | Kang, Keehoon | - |
dc.contributor.author | Lee, Takhee | - |
dc.date.accessioned | 2024-05-16T01:25:30Z | - |
dc.date.available | 2024-05-16T01:25:30Z | - |
dc.date.created | 2024-05-09 | - |
dc.date.created | 2024-05-09 | - |
dc.date.issued | 2024-03 | - |
dc.identifier.citation | ACS Energy Letters, Vol.9 No.4, pp.1725-1734 | - |
dc.identifier.issn | 2380-8195 | - |
dc.identifier.uri | https://hdl.handle.net/10371/202484 | - |
dc.description.abstract | Tin (Sn) halide perovskites are promising materials for various electronic applications due to their favorable properties. However, facile interaction with atmospheric oxygen (O-2) often hinders the practical use of Sn-based perovskites, which is regarded as a major cause of undesired variations in their electrical and structural properties. Herein, we report the reversible p-doping in phenethylammonium tin iodide ((PEA)(2)SnI4) transistors when they are exposed sequentially to ambient and vacuum conditions. Exposure to ambient conditions induces p-doping effects that lead to a significant shift in the threshold voltage. Interestingly, we have found that the unintentionally p-doped (PEA)(2)SnI4 transistors can be fully restored by simply exposing them to vacuum, indicating a complete dedoping without any structural or operational degradation. Our first-principles calculations further support the observations by revealing that the doping by O-2 molecules occurs via occupying the interstitial sites that form acceptor levels close to the valence band maximum of (PEA)(2)SnI4. | - |
dc.language | 영어 | - |
dc.publisher | American Chemical Society | - |
dc.title | Reversible Oxidative p-Doping in 2D Tin Halide Perovskite Field-Effect Transistors | - |
dc.type | Article | - |
dc.identifier.doi | 10.1021/acsenergylett.4c00497 | - |
dc.citation.journaltitle | ACS Energy Letters | - |
dc.identifier.wosid | 001190719000001 | - |
dc.identifier.scopusid | 2-s2.0-85188671274 | - |
dc.citation.endpage | 1734 | - |
dc.citation.number | 4 | - |
dc.citation.startpage | 1725 | - |
dc.citation.volume | 9 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Kang, Keehoon | - |
dc.contributor.affiliatedAuthor | Lee, Takhee | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.subject.keywordPlus | TOTAL-ENERGY CALCULATIONS | - |
dc.subject.keywordPlus | LEAD-FREE | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | STABILITY | - |
dc.subject.keywordPlus | MECHANISM | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordPlus | DEFECTS | - |
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