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Mechanochemical Synthesis of Zero-Dimensional Metal Halide Perovskites

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dc.contributor.authorKim, Yongjin-
dc.contributor.authorBaek, Kyeong-Yoon-
dc.contributor.authorChoi, Hyeonmin-
dc.contributor.authorJung, Joonha-
dc.contributor.authorLee, Takhee-
dc.contributor.authorKang, Keehoon-
dc.date.accessioned2024-05-16T01:26:00Z-
dc.date.available2024-05-16T01:26:00Z-
dc.date.created2023-09-11-
dc.date.created2023-09-11-
dc.date.issued2023-
dc.identifier.citation2023 7TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM-
dc.identifier.urihttps://hdl.handle.net/10371/202498-
dc.description.abstractIn this work, we directly demonstrate solid-state synthesis of zero-dimensional metal halide perovskites by mechanochemical synthesis. Three representative zero-dimensional perovskites, Cs4PbBr6, Cs2SnBr6, and Cs3Cu2I5, were synthesized with high purity as confirmed by structural analysis and optical spectroscopy measurements. This work promotes mechanochemical synthesis as a tool for observing and understanding the structure-property relationships of low-dimensional perovskites, in addition to their potential as a facile synthesis method for large-scale synthesis of metal halide perovskites.-
dc.language영어-
dc.publisherIEEE-
dc.titleMechanochemical Synthesis of Zero-Dimensional Metal Halide Perovskites-
dc.typeArticle-
dc.identifier.doi10.1109/EDTM55494.2023.10102992-
dc.citation.journaltitle2023 7TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM-
dc.identifier.wosid001004185500063-
dc.identifier.scopusid2-s2.0-85158159287-
dc.description.isOpenAccessN-
dc.contributor.affiliatedAuthorLee, Takhee-
dc.contributor.affiliatedAuthorKang, Keehoon-
dc.type.docTypeProceedings Paper-
dc.description.journalClass1-
dc.subject.keywordAuthorMechanochemical synthesis-
dc.subject.keywordAuthorMetal halide perovskites-
dc.subject.keywordAuthorZero-dimensional perovskites-
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  • College of Engineering
  • Department of Materials Science & Engineering
Research Area Molecular doping in emerging semiconductors, Next-generation electronic devices, Transport phenomena in organic semiconductors

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