Strategies for improving the device performance of 2D perovskite field-effect transistors

Abstract

In this work, we demonstrate strategies for improving the device performance of Ruddlesden popper perovskite field effect transistors by using morphological and compositional engineering concepts. These strategies impact directly on both the local and microstructure of perovskites, thereby improving the structural stability and charge carrier mobility, which may lead to viable strategies for developing high-performance perovskite-based electronic devices.