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Crystallinity-dependent device characteristics of polycrystalline 2D n=4 Ruddlesden-Popper perovskite photodetectors

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dc.contributor.authorKim, Junwoo-
dc.contributor.authorLee, Woocheol-
dc.contributor.authorCho, Kyungjune-
dc.contributor.authorAhn, Heebeom-
dc.contributor.authorLee, Jonghoon-
dc.contributor.authorBaek, Kyeong-Yoon-
dc.contributor.authorKim, Jae-Keun-
dc.contributor.authorKang, Keehoon-
dc.contributor.authorLee, Takhee-
dc.date.accessioned2024-05-16T01:26:51Z-
dc.date.available2024-05-16T01:26:51Z-
dc.date.created2021-03-18-
dc.date.created2021-03-18-
dc.date.issued2021-04-
dc.identifier.citationNanotechnology, Vol.32 No.18-
dc.identifier.issn0957-4484-
dc.identifier.urihttps://hdl.handle.net/10371/202524-
dc.description.abstractRuddlesden-Popper (RP) perovskites have attracted a lot of attention as the active layer for optoelectronic devices due to their excellent photophysical properties and environmental stability. Especially, local structural properties of RP perovskites have shown to play important roles in determining the performance of optoelectronic devices. Here, we report the photodetector performance variation depending on the crystallinity of n = 4 two-dimensional (2D) RP perovskite polycrystalline films. Through controlling the solvent evaporation rate, 2D RP perovskite films could be tuned between highly- and randomly-orientated phases. We investigated how different factors related to the film crystallinity are reflected in the variation of photodetector performances by considering grain boundary and low energy edge state effects in n = 4 RP perovskites. Better understanding the interplay between these factors that govern the photophysical properties of the devices would be beneficial for designing high-performance RP perovskite-based optoelectronic devices.-
dc.language영어-
dc.publisherInstitute of Physics Publishing-
dc.titleCrystallinity-dependent device characteristics of polycrystalline 2D n=4 Ruddlesden-Popper perovskite photodetectors-
dc.typeArticle-
dc.identifier.doi10.1088/1361-6528/abe003-
dc.citation.journaltitleNanotechnology-
dc.identifier.wosid000620539400001-
dc.identifier.scopusid2-s2.0-85102321918-
dc.citation.number18-
dc.citation.volume32-
dc.description.isOpenAccessN-
dc.contributor.affiliatedAuthorKang, Keehoon-
dc.contributor.affiliatedAuthorLee, Takhee-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.subject.keywordPlusSUPPRESSED ION MIGRATION-
dc.subject.keywordPlusHALIDE PEROVSKITES-
dc.subject.keywordPlusVERTICAL ORIENTATION-
dc.subject.keywordPlusSOLAR-CELLS-
dc.subject.keywordPlusLIGHT-
dc.subject.keywordAuthorperovskites-
dc.subject.keywordAuthorcrystallinity-
dc.subject.keywordAuthorphotodetectors-
dc.subject.keywordAuthorgrain boundary-
dc.subject.keywordAuthoroptoelectronic devices-
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  • College of Engineering
  • Department of Materials Science & Engineering
Research Area Molecular doping in emerging semiconductors, Next-generation electronic devices, Transport phenomena in organic semiconductors

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